Method for fabricating a semiconductor device and semiconductor device

• US 7,612,381 B2
• Filed: 02/26/2007
• Issued: 11/03/2009
• Est. Priority Date: 08/31/2004
• Status: Active Grant

• Current Assignee: Meijo University
• Original Assignee: Meijo University
• Inventors: Kasugai, Hideki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu, Iwaya, Motoaki
• Primary Examiner(s): Purvis; Sue
• Assistant Examiner(s): STOWE, SCOTT C
• Application Number:
  US11/710,744
• Publication Number:
  US 20070145557A1
• Time in Patent Office: 981 Days
• Field of Search: 257/98, 257/787, 257/13, 257/94, 257/99, 257/100, 257/E33.067, 257/E33.068, 257/E33.005, 257/79, 257/103, 257/190, 438/29
• US Class Current: 257/79
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.

Claims

1. A semiconductor device, comprising:

a translucent portion having a first semiconductor layer that has a first side and a second side;

the first side of the first semiconductor layer is comprised of a first uniformly distributed periodic structure;

a light emitting portion that contacts the first side and is comprised of;

a thin coating of low temperature deposition buffer layer deposited onto the first side that mimics and parallels the first uniformly distributed periodic structure;

the low temperature deposition buffer layer includes a second buffer side that contacts the first side of the first semiconductor layer, forming a second uniformly distributed periodic structure;

the low temperature deposition buffer layer further includes a first buffer side forming a third uniformly distributed periodic structure, with the first buffer side contacting a second cladding side of a cladding layer, with the second cladding side forming a fourth uniformly distributed periodic structure as a result of contact with the first buffer side of the low temperature deposition buffer layer;

a light emitting layer that contacts a first cladding side of the cladding layer;

a barrier layer that contacts the light emitting layer;

a contact layer that contacts the barrier layer;

a p-electrode that contacts the contact layer; and

a n-electrode that contacts the second side of the first semiconductor layer;

with the first, the second, the third, and the fourth uniformly distributed periodic structure having an effective refractive index that converges gradually towards a second refractive index from a first refractive index as light emitted advances and penetrates more deeply in a height direction of one uniformly distributed periodic structure towards another uniformly distributed periodic structure, which improves transmittance of light by suppressing variations in first and second refractive indexes;

with light ultimately extracted from the second side of the first semiconductor layer.