Transition region for use with an antenna-integrated electron tunneling device and method

• US 7,612,733 B2
• Filed: 03/12/2007
• Issued: 11/03/2009
• Est. Priority Date: 03/12/2007
• Status: Expired due to Fees

• Current Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Original Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Inventors: Weiss, Manoja D., Klimek, Michael
• Primary Examiner(s): PHAN, THO GIA
• Application Number:
  US11/684,840
• Publication Number:
  US 20080224931A1
• Time in Patent Office: 967 Days
• Field of Search: 343/700.MS, 343/850, 343/860, 296/01, 257/25, 257/30
• US Class Current: 343/860
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 13/085 Slot-line radiating ends
• CPC Class Codes: H01Q 23/00 Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 9/16 with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole H01Q9/44 takes precedence
• CPC Class Codes: Y10T 29/49018 with other electrical component

Abstract

An electron tunneling device includes a first non-insulating strip and a second non-insulating strip spaced apart from one another such that first and second end portions, respectively, of the first and second non-insulating strips cooperate to form an antenna having an antenna impedance. The first and second non-insulating strips include a transition region that extends from the antenna to a tunneling region in which the first and second non-insulating strips are in a confronting relationship. An arrangement cooperates with a portion of each of the first and second non-insulating strips in the tunneling region to form an electron tunneling structure exhibiting a tunneling region impedance. The transition region is configured to match the antenna impedance to the tunneling region impedance. The transition region can provide for changing an electromagnetic field orientation between the antenna and the tunneling region.

Claims

1. A device, comprising:

a first non-insulating strip and a second non-insulating strip spaced apart from one another such that first and second end portions, respectively, of the first and second non-insulating strips cooperate to form an antenna having an antenna impedance and said first and second non-insulating strips include a transition region that extends from said antenna to a tunneling region in which the first and second non-insulating strips are in a confronting relationship;

an arrangement cooperating with a portion of each of the first and second non-insulating strips in said tunneling region to form an electron tunneling structure exhibiting a tunneling region impedance, said arrangement being configured to support electron tunneling between and to said first and second non-insulating strips and said transition region is configured to match, at least to an approximation, said antenna impedance to said tunneling region impedance.

2. The device of claim 1 wherein said antenna is a planar antenna.

3. The device of claim 2 wherein said planar antenna is configured as a dipole antenna.

4. The device of claim 2 wherein said planar antenna is configured as a bowtie antenna.

5. The device of claim 2 wherein said planar antenna is configured as a vee antenna.

6. The device of claim 2 wherein said planar antenna is configured as a Vivaldi antenna.

7. The device of claim 2 wherein said planar antenna defines a first oscillation direction for supporting a first electromagnetic wave in a plane that is at least generally coplanar with the planar antenna.

8. The device of claim 7 wherein said tunneling junction produces said electron tunneling in said tunneling region at least generally perpendicular to said plane of the planar antenna, and said tunneling region is configured for supporting a second electromagnetic wave having a second oscillation direction that is at least generally perpendicular to said plane and said transition region is configured for rotating said first electromagnetic wave between said first oscillation direction at said planar antenna and said second oscillation direction at said tunneling region.

9. The device of claim 8 wherein said transition region includes a coplanar strip line (CPS) section and a parallel plate (PP) section, each of which is configured to contribute to an impedance match between said antenna impedance and said tunneling region impedance.

10. The device of claim 9 wherein said CPS section includes a quarterwave transformer (QWT) segment.

11. The device of claim 9 wherein said CPS section includes a taper that is configured to contribute to said impedance match.

12. The device of claim 9 wherein said PP section includes a taper that is configured to contribute to said impedance match.

13. The device of claim 9 wherein said CPS section includes a first CPS end and an opposing, second CPS end, which first CPS end is connected with said planar antenna, and said PP section includes a first PP end and an opposing, second PP end, which first PP end is connected with said second CPS end, and which second PP end is connected with said tunneling region.

14. The device of claim 13 wherein said CPS section exhibits a first CPS impedance at said first CPS end and a second CPS impedance at said second CPS end and said first CPS impedance is substantially matched in magnitude with said antenna impedance.

15. The device of claim 14 wherein said PP section exhibits a first PP impedance at said first PP end and a second PP impedance at said second PP end and said first PP impedance is substantially matched in magnitude with said second CPS impedance.

16. The device of claim 15 wherein said second PP impedance is substantially matched in magnitude with said tunneling region impedance.

17. The device of claim 1 wherein said first and second non-insulating strips including third and fourth portions, respectively, that cooperate to form an additional antenna exhibiting an additional antenna impedance at least generally across said tunneling region from said antenna, and said first and second strips include an additional transition region that extends from the additional antenna to the tunneling region to impedance match, at least to an approximation, said tunneling region impedance with said additional antenna impedance and to electromagnetically couple the tunneling region with the additional antenna.

18. The electron tunneling device of claim 17 wherein said additional antenna is planar in configuration, at least generally defining an additional antenna plane.

19. The electron tunneling device of claim 18 wherein said electron tunneling in said tunneling region occurs in a plane that is at least generally perpendicular to the additional antenna plane of the output planar antenna, and wherein said tunneling region is configured to support a first electromagnetic wave having a first oscillation direction that is at least generally perpendicular to the additional antenna plane and said additional antenna is configured to support a second magnetic wave having a second oscillation direction that is at least generally parallel with the additional antenna plane and said additional transition region is configured for rotating said first electromagnetic wave between said first oscillation direction at said tunneling region and said second oscillation direction at said additional antenna.

20. A method for producing a device, said method comprising:

forming a first non-insulating strip and a second non-insulating strip spaced apart from one another such that first and second end portions, respectively, of the first and second non-insulating strips cooperate to form an antenna having an antenna impedance and configuring said first and second non-insulating strips to include a transition region that extends from said antenna to a tunneling region in which the first and second non-insulating strips are in a confronting relationship;

configuring an arrangement to cooperate with a portion of each of the first and second non-insulating strips in said tunneling region to form an electron tunneling structure exhibiting a tunneling region impedance, and further configuring said arrangement to support electron tunneling between and to said first and second non-insulating strips and said transition region to match, at least to an approximation, said antenna impedance to said tunneling region impedance.

21. The method of claim 20 wherein said tunneling junction produces said electron tunneling in said tunneling region at least generally perpendicular to a plane that is defined by the planar antenna, and said planar antenna supports a first electromagnetic wave having a first oscillation direction, and configuring said tunneling region for supporting a second electromagnetic wave having a second oscillation direction that is perpendicular to said plane and further configuring said transition region to rotate said first electromagnetic wave between said first oscillation direction at said planar antenna and said second oscillation direction at said tunneling region.