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Active matrix substance and display device including the same

  • US 7,612,839 B2
  • Filed: 03/06/2006
  • Issued: 11/03/2009
  • Est. Priority Date: 03/15/2005
  • Status: Expired due to Fees
First Claim
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1. An active matrix substrate comprising:

  • a plurality of data signal lines;

    a plurality of scanning signal lines intersecting with the data signal lines; and

    a pixel array including a plurality of pixel circuits disposed in a matrix pattern correspondingly to the respective intersections defined by intersecting of the data signal lines and the scanning signal lines, each of the plurality of pixel circuits including;

    a field-effect transistor having a source electrode connected, directly or via a predetermined element, with the data signal line which passes through a corresponding one of the intersections, and a gate electrode connected with the scanning signal line which passes through the corresponding intersection; and

    a voltage holding electrode connected, directly or via a predetermined element, with a drain electrode of the field-effect transistor and constituting a voltage holding capacitor;

    whereinthe pixel circuits in the pixel array include;

    a first number of the pixel circuits whose field-effect transistor is provided by a first-type field-effect transistor which gives an increasingly large electrostatic capacitance between the drain electrode and the gate electrode in accordance with an increase in a positional shift between a pattern for the drain electrode and a pattern for the gate electrode in a predetermined direction; and

    a second number, that is substantially the same as the first number, of the pixel circuits whose field-effect transistor is provided by a second-type field-effect transistor which gives an increasingly small electrostatic capacitance between the two electrodes in accordance with the increase in the positional shift in the predetermined direction; and

    the pixel circuits including the first-type field-effect transistor and the pixel circuits including the second-type field-effect transistor are disposed in substantially uniform dispersion in the pixel array.

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