Active matrix substance and display device including the same
First Claim
1. An active matrix substrate comprising:
- a plurality of data signal lines;
a plurality of scanning signal lines intersecting with the data signal lines; and
a pixel array including a plurality of pixel circuits disposed in a matrix pattern correspondingly to the respective intersections defined by intersecting of the data signal lines and the scanning signal lines, each of the plurality of pixel circuits including;
a field-effect transistor having a source electrode connected, directly or via a predetermined element, with the data signal line which passes through a corresponding one of the intersections, and a gate electrode connected with the scanning signal line which passes through the corresponding intersection; and
a voltage holding electrode connected, directly or via a predetermined element, with a drain electrode of the field-effect transistor and constituting a voltage holding capacitor;
whereinthe pixel circuits in the pixel array include;
a first number of the pixel circuits whose field-effect transistor is provided by a first-type field-effect transistor which gives an increasingly large electrostatic capacitance between the drain electrode and the gate electrode in accordance with an increase in a positional shift between a pattern for the drain electrode and a pattern for the gate electrode in a predetermined direction; and
a second number, that is substantially the same as the first number, of the pixel circuits whose field-effect transistor is provided by a second-type field-effect transistor which gives an increasingly small electrostatic capacitance between the two electrodes in accordance with the increase in the positional shift in the predetermined direction; and
the pixel circuits including the first-type field-effect transistor and the pixel circuits including the second-type field-effect transistor are disposed in substantially uniform dispersion in the pixel array.
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Accused Products
Abstract
It is possible to decrease block segmentation and flickering due to separate exposure in an active matrix substrate while avoiding decreased aperture ratio, increased parasitic capacity and complication in manufacturing process. A first pixel circuit and a second pixel circuit including a first-type TFT and a second-type TFT, respectively, are disposed alternately relative to each other in both directions of row and column in an active matrix substrate. In the first-type and the second-type TFTs, a pattern misalignment of the drain electrode with respect to the gate electrode in an up-down direction will increase/decrease a gate-drain parasitic capacity Cgd in reverse ways. By disposing these two types of TFTs in uniform dispersion, the increase/decrease in the parasitic capacity Cgd caused by pattern misalignment occurring at the time of manufacture are averaged.
21 Citations
13 Claims
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1. An active matrix substrate comprising:
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a plurality of data signal lines; a plurality of scanning signal lines intersecting with the data signal lines; and a pixel array including a plurality of pixel circuits disposed in a matrix pattern correspondingly to the respective intersections defined by intersecting of the data signal lines and the scanning signal lines, each of the plurality of pixel circuits including; a field-effect transistor having a source electrode connected, directly or via a predetermined element, with the data signal line which passes through a corresponding one of the intersections, and a gate electrode connected with the scanning signal line which passes through the corresponding intersection; and a voltage holding electrode connected, directly or via a predetermined element, with a drain electrode of the field-effect transistor and constituting a voltage holding capacitor;
whereinthe pixel circuits in the pixel array include; a first number of the pixel circuits whose field-effect transistor is provided by a first-type field-effect transistor which gives an increasingly large electrostatic capacitance between the drain electrode and the gate electrode in accordance with an increase in a positional shift between a pattern for the drain electrode and a pattern for the gate electrode in a predetermined direction; and a second number, that is substantially the same as the first number, of the pixel circuits whose field-effect transistor is provided by a second-type field-effect transistor which gives an increasingly small electrostatic capacitance between the two electrodes in accordance with the increase in the positional shift in the predetermined direction; and the pixel circuits including the first-type field-effect transistor and the pixel circuits including the second-type field-effect transistor are disposed in substantially uniform dispersion in the pixel array. - View Dependent Claims (2, 3, 4, 5, 6, 7, 9, 10, 11, 12, 13)
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8. An active matrix substrate comprising:
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a plurality of data signal lines; a plurality of scanning signal lines intersecting with the data signal lines; and a pixel array including a plurality of pixel circuit pairs disposed in a matrix pattern correspondingly to the respective intersections defined by intersecting of the data signal lines and the scanning signal lines, each of the pixel circuit pairs includes two pixel circuits sandwiching the scanning signal line which passes through a corresponding one of the intersections;
whereineach of the two pixel circuits includes; a field-effect transistor having a source electrode connected, directly or via a predetermined element, with the data signal line which passes through the corresponding intersection, and a gate electrode connected with the scanning signal line which passes through the corresponding intersection; and a voltage holding electrode connected, directly or via a predetermined element, with a drain electrode of the field-effect transistor and constituting a voltage holding capacitor; and one of the two pixel circuits is provided by a pixel circuit whose field-effect transistor is provided by a first-type field-effect transistor which gives an increasingly large electrostatic capacitance between the drain electrode and the gate electrode in accordance with an increase in a positional shift between a pattern for the drain electrode and a pattern for the gate electrode in a predetermined direction; and the other of the two pixel circuits is provided by a pixel circuit whose field-effect transistor is provided by a second-type field-effect transistor which gives an increasingly small electrostatic capacitance between the two electrodes in accordance with the increase in the positional shift in the predetermined direction.
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Specification