Power core devices

• US 7,613,007 B2
• Filed: 11/30/2005
• Issued: 11/03/2009
• Est. Priority Date: 12/21/2004
• Status: Active Grant

• Current Assignee: Chemtron Research LLC (Intellectual Ventures LLC)
• Original Assignee: E. I. du Pont de Nemours and Company (Corteva, Inc.)
• Inventors: Sreeram, Attiganal N., Banerji, Sounak, Amey, Daniel Irwin Jr., Borland, William J., McGregor, David Ross, Dietz, Karl Hartmann
• Primary Examiner(s): Reichard; Dean A.
• Assistant Examiner(s): NGUYEN, HOA CAO
• Application Number:
  US11/289,994
• Publication Number:
  US 20060138591A1
• Time in Patent Office: 1,434 Days
• Field of Search: 257/532, 257/691, 257/700, 361/760, 361/763, 361/761, 361/782, 361/738, 361748-751, 361/780, 361/783, 361790-795, 361/811, 361/821, 361/299.1, 361/299.2, 361/299.3, 361/301.1, 361/766
• US Class Current: 361/763
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01057 Lanthanum [La]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/19105 in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H05K 1/162 incorporating printed capacitors
• CPC Class Codes: H05K 2201/0355 : Metal foils
• CPC Class Codes: H05K 2201/09309 : Core having two or more power planes; Capacitive laminate of two power planes
• CPC Class Codes: H05K 2201/09536 : Buried plated through-holes, i.e. plated through-holes formed in a core before lamination
• CPC Class Codes: H05K 2201/09763 : Printed component having superposed conductors, but integrated in one circuit layer
• CPC Class Codes: H05K 3/429 : Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
• CPC Class Codes: H05K 3/4602 : characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
• CPC Class Codes: H05K 3/4641 : having integrally laminated metal sheets or special power cores

Abstract

The present invention relates to a device comprising a power core wherein said power core comprises: at least one embedded singulated capacitor layer containing at least one embedded singulated capacitor; and at least one planar capacitor laminate; wherein said planar capacitor laminate serves as a low inductance path to supply a charge to said at least one embedded singulated capacitor; and wherein said at least one embedded singulated capacitor is connected in parallel to at least one of the said planar capacitor laminates; and wherein said power core is interconnected to at least one signal layer.

Claims

1. A device comprising a power core wherein said power core comprises:

at least one embedded singulated capacitor layer containing more than one embedded singulated individual capacitor, each of said embedded singulated individual capacitors comprising a capacitor formed on a metal foil having a thickness of from 1 to 100 microns; and

at least one planar capacitor laminate;

wherein said planar capacitor laminate serves as a low inductance path to supply a charge to said embedded singulated individual capacitors; and

wherein more than one of said embedded singulated individual capacitors in said embedded singulated capacitor layer are connected in parallel to one of the said at least one planar capacitor laminates; and

wherein said power core is interconnected to at least one signal layer.

2. The device of claim 1 wherein said power core comprises multiple embedded singulated capacitor layers and multiple planar capacitor laminates.

3. The device of claim 1 wherein said embedded singulated individual capacitors each comprise at least a first electrode and a second electrode.

4. The device of claim 3 wherein the first electrode and second electrode of the embedded singulated individual capacitors are connected to at least one power terminal of a semiconductor device.

5. The device of claim 4 wherein said semiconductor device is an integrated circuit.

6. The device of claim 4 wherein each of the embedded singulated individual capacitors are placed closer to a power terminal of the semiconductor device than the planar capacitor to which the respective singulated individual capacitor is connected in parallel.

7. The device of claim 1 comprising more than one signal layer wherein said signal layers are connected through conductive vias.

8. The device of claim 1 wherein said device is selected from an interposer, printed wiring board, multichip module, area array package, system-on-package, and system-in-package.

9. The device of claim 1 wherein each of said embedded singulated individual formed on foil capacitors comprises a fired on foil capacitor.

10. The device of claim 1 wherein each of said embedded singulated individual capacitors comprising a capacitor formed on a metal foil having a thickness of from 3 to 75 microns.

11. The device of claim 1 wherein said at least one planar capacitor layer comprises an organic dielectric.

12. The device of claim 1 wherein the organic dielectric of the planar capacitor layer comprises a ceramic-filled organic dielectric.

13. A device comprising a power core for a semiconductor device wherein said power core comprises:

at least one embedded singulated capacitor layer containing more than one embedded singulated individual capacitor, each of said more than one embedded singulated individual capacitors comprising a capacitor formed on a metal foil, said metal foil forming a first electrode of each of said more than one embedded singulated individual capacitors, and each of said more than one embedded singulated capacitors further comprising a second electrode, wherein said first electrode and second electrode of said more than one embedded singulated individual capacitors are connected to at least one power terminal of the semiconductor device;

at least one planar capacitor laminate;

wherein said more than one of said embedded singulated individual capacitors in said embedded singulated capacitor layer are each connected in parallel to one of the said at least one planar capacitor laminate and said planar capacitor laminate serves as a low inductance path to supply a charge to said more than one embedded singulated individual capacitors;

wherein each of said more than one embedded singulated individual capacitors connected in parallel to said planar capacitor are closer to a power terminal of the semiconductor device than is the planar capacitor to which the respective singulated individual capacitor is connected in parallel; and

wherein said power core is interconnected to at least one signal layer.

14. The device of claim 13 wherein said semiconductor device is an integrated circuit.