Semiconductor memory device in which data is stored in nonvolatile state, by using semiconductor elements of metal oxide semiconductor (MOS) structure
First Claim
1. A semiconductor memory device comprising:
- a first data line and a second data line connected to each of a plurality of sense amplifiers; and
a plurality of memory cells arranged in rows and columns, each of the memory cells including a memory element and first and second selection transistors,wherein;
the memory element includes a semiconductor element of metal oxide semiconductor (MOS) structure, and data is programmed when an insulating film is broken down by application of a voltage;
the first selection transistor connects the memory element to the first data line in order to program data;
the second selection transistor connects the memory element to the second data line in order to program data and sense the programmed data, the second selection transistor having a gate-electrode width that is smaller than that of the first selection transistor; and
each of the memory cells further includes a first electric-field mitigating transistor connected between the memory element and the first and second selection transistors, a third selection transistor connected between the first selection transistor and the first data line, and a second electric-field mitigating transistor connected between the second selection transistor and the first electric-field mitigating transistor.
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Accused Products
Abstract
A semiconductor memory device includes a memory element, a first data line and a second data line, a first selection transistor, and a second selection transistor. The memory element includes a semiconductor element of MOS structure in which data is programmed when an insulating film provided in the semiconductor element is broken down by application of a voltage thereto. The first and second data lines are connected to a sense amplifier. The first selection transistor is configured to connect the memory element to the first data line in order to program data in the memory element. The second selection transistor is configured to connect the memory element to the second data line in order to program data in the memory element and detect the data programmed in the memory element. The second selection transistor has a smaller gate-electrode width smaller than the first selection transistor.
14 Citations
12 Claims
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1. A semiconductor memory device comprising:
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a first data line and a second data line connected to each of a plurality of sense amplifiers; and a plurality of memory cells arranged in rows and columns, each of the memory cells including a memory element and first and second selection transistors, wherein; the memory element includes a semiconductor element of metal oxide semiconductor (MOS) structure, and data is programmed when an insulating film is broken down by application of a voltage; the first selection transistor connects the memory element to the first data line in order to program data; the second selection transistor connects the memory element to the second data line in order to program data and sense the programmed data, the second selection transistor having a gate-electrode width that is smaller than that of the first selection transistor; and each of the memory cells further includes a first electric-field mitigating transistor connected between the memory element and the first and second selection transistors, a third selection transistor connected between the first selection transistor and the first data line, and a second electric-field mitigating transistor connected between the second selection transistor and the first electric-field mitigating transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification