Switch circuit and method of switching radio frequency signals

• US 7,613,442 B1
• Filed: 05/11/2005
• Issued: 11/03/2009
• Est. Priority Date: 10/10/2001
• Status: Active Grant

• Current Assignee: pSemi Corporation (Murata Manufacturing Co Limited)
• Original Assignee: Peregrine Semiconductor Corporation (Murata Manufacturing Co Limited)
• Inventors: Kelly, Dylan J., Burgener, Mark L., Cable, James S.
• Primary Examiner(s): Tieu; Binh K
• Application Number:
  US11/127,520
• Time in Patent Office: 1,637 Days
• Field of Search: 340/571, 340/572.1, 323/220, 323/226, 323/270, 323/274, 323/285, 455/26.1, 455/78, 455/333, 455/425, 455/550.1, 455/556.1, 455/560, 237/280, 237/281, 237/341, 237/472, 379/412, 379/413
• US Class Current: 455/333
• CPC Class Codes: H03K 17/063 in field-effect transistor switches
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

Abstract

A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The RF switch provides improvements in insertion loss, switch isolation, and switch compression. An improved voltage reducing circuit is described. The improved voltage reducing circuit limits voltages applied to selected nodes within the integrated circuit.

Claims

1. An improved voltage reduction circuit adapted to limit voltage levels within an electric circuit, wherein the voltage reduction circuit has an input voltage incident at an input node, an output voltage incident at an output node, and includes a plurality of MOSFET transistors, comprising:

a) a series MOSFET transistor, wherein the series MOSFET transistor has a drain connected to the input node, a gate connected to circuit ground, and a source connected to the output node, and wherein the series MOSFET transistor has a first threshold voltage; and

b) a shunt MOSFET transistor, wherein the shunt MOSFET transistor has a drain connected to the output node, a gate connected to the input node, a source connected to ground, and wherein the shunt MOSFET transistor has a second threshold voltage.

2. The voltage reduction circuit of claim 1, wherein the series MOSFET transistor comprises an N-channel (NMOS) transistor.

3. The voltage reduction circuit of claim 2, wherein the shunt MOSFET transistor comprises an N-channel (NMOS) transistor.

4. The voltage reduction circuit of claim 1, wherein the series MOSFET transistor comprises a P-channel (PMOS) transistor.

5. The voltage reduction circuit claim 4, wherein the shunt MOSFET transistor comprises a P-channel (PMOS) transistor.

6. The voltage reduction circuit of claim 1, wherein the first threshold voltage is approximately between 700 mV and 800 mV.

7. The voltage reduction circuit of claim 1, wherein the second threshold voltage is approximately between 700 mV and 800 mV.

8. The voltage reduction circuit of claim 1, wherein the input voltage applied to the input node ranges approximately between −

3 volts and 0 volts.

9. The voltage reduction circuit of claim 1, wherein the input voltage at the input node is greater than 0 volts, and wherein the output voltage at the output node is clipped at approximately 0 volts.

10. The voltage reduction circuit of claim 1, wherein a voltage between the drain and source of the shunt MOSFET transistor comprises a leakage current multiplied by a resistance of the shunt MOSFET transistor.

11. The voltage reduction circuit of claim 10, wherein the leakage current comprises 1 pA, and wherein the resistance of the shunt MOSFET transistor comprise approximately 2.5K ohms.