Method for producing silicon epitaxial wafer and silicon epitaxial wafer
First Claim
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1. A method for producing a silicon epitaxial wafer that uses a vapor phase deposition apparatus, the vapor phase deposition apparatus comprising:
- a reaction chamber;
a susceptor within the reaction chamber on which a silicon wafer is mounted;
a lift pin vertically movable relative to the susceptor that allows the silicon wafer to be mounted on and removed from the susceptor when the lift pin is vertically moved to support the silicon wafer from a lower surface side of the silicon wafer;
an upper heating member for heating the susceptor from an upper side; and
a lower heating member for heating the susceptor from a lower side;
the method comprising;
growing a silicon epitaxial layer by vapor phase growth on a main surface of the silicon wafer;
wherein;
a heating ratio of the upper heating member to the lower heating member is about 44-48% to about 52-56%; and
the heating ratio controls a surface shape of the silicon epitaxial layer formed near the lift pin on the main surface of the silicon wafer.
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Abstract
In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the lower heating ratio is adjusted.
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Citations
1 Claim
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1. A method for producing a silicon epitaxial wafer that uses a vapor phase deposition apparatus, the vapor phase deposition apparatus comprising:
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a reaction chamber; a susceptor within the reaction chamber on which a silicon wafer is mounted; a lift pin vertically movable relative to the susceptor that allows the silicon wafer to be mounted on and removed from the susceptor when the lift pin is vertically moved to support the silicon wafer from a lower surface side of the silicon wafer; an upper heating member for heating the susceptor from an upper side; and a lower heating member for heating the susceptor from a lower side;
the method comprising;growing a silicon epitaxial layer by vapor phase growth on a main surface of the silicon wafer; wherein; a heating ratio of the upper heating member to the lower heating member is about 44-48% to about 52-56%; and the heating ratio controls a surface shape of the silicon epitaxial layer formed near the lift pin on the main surface of the silicon wafer.
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Specification
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Current AssigneeShin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
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Original AssigneeShin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
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InventorsNishizawa, Tsuyoshi, Kanaya, Koichi
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Primary Examiner(s)Kunemund; Robert M
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Application NumberUS10/572,465Publication NumberTime in Patent Office1,870 DaysField of Search117/84, 117/90, 117/93, 117/94, 117/105, 117/939US Class Current117/84CPC Class CodesC30B 25/02 Epitaxial-layer growthC30B 25/12 Substrate holders or suscep...C30B 29/06 Silicon
