Display device and manufacturing method of the same

• US 7,615,495 B2
• Filed: 11/02/2006
• Issued: 11/10/2009
• Est. Priority Date: 11/17/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hosoya, Kunio, Fujikawa, Saishi
• Primary Examiner(s): Hendricks; Keith D
• Assistant Examiner(s): GEORGE, PATRICIA ANN
• Application Number:
  US11/591,556
• Publication Number:
  US 20070111144A1
• Time in Patent Office: 1,104 Days
• Field of Search: 438/720
• US Class Current: 438/720
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H10K 10/481 characterised by the gate conductors
• CPC Class Codes: H10K 59/1315 comprising structures specially adapted for lowering the resistance
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/166 using selective deposition, e.g. using a mask
• CPC Class Codes: H10K 71/231 by etching of existing layers
• CPC Class Codes: H10K 71/621 Providing a shape to conductive layers, e.g. patterning or selective deposition

Abstract

A plurality of wires and electrodes are formed by forming a first conductive film, selectively forming a resist over the first conductive film, forming a second conductive film over the first conductive film and the resist, removing the second conductive film formed over the resist by removing the resist, forming a third conductive film so as to cover the second conductive film formed over the first conductive film, and selectively etching the first conductive film and the third conductive film. Thus, wires using a low resistance material can be formed in a large-sized panel, and thus, a problem of signal delay can be solved.

Claims

1. A manufacturing method of a display device, comprising the steps of:

forming a first conductive film;

then

selectively forming a resist over the first conductive film;

forming a second conductive film, wherein the second conductive film includes a first portion over the first conductive film and a second portion over the resist;

removing the second portion of the second conductive film by removing the resist;

forming a third conductive film so as to cover the first portion of the second conductive film; and

selectively etching the first conductive film and the third conductive film so as to form a wiring.

5. The manufacturing method of a display device according to claim 1, further comprising a step of forming a protective conductive film over the second conductive film.

6. The manufacturing method of a display device according to claim 1, wherein the resist is formed so that an end portion of the resist has an inverse tapered shape.

7. The manufacturing method of a display device according to claim 1, wherein the resist is formed so that an end portion of the resist has a tapered shape which is almost perpendicular, or which has a taper angle of greater than or equal to 75°

and less than 90°

.

8. The manufacturing method of a display device according to claim 1, wherein the resist is formed by a droplet discharging method.

9. The manufacturing method of a display device according to claim 1, wherein the wiring has a plurality of wires, and

wherein the second conductive film is formed such that resistances of the plurality of wires, whose length are different from each other, are almost equal.

37. The manufacturing method of a display device according to claim 1,

wherein at least one of the first conductive film and the third conductive film is formed by a sputtering method or a CVD method.

43. The manufacturing method of a display device according to claim 1, wherein at least one of the first conductive film and the third conductive film comprises at least one of tungsten, molybdenum, chromium and titanium.

2. A manufacturing method of a display device, comprising the steps of:

forming a first conductive film;

then

selectively forming a resist over the first conductive film;

forming a second conductive film, wherein the second conductive film includes a first portion over the first conductive film and a second portion over the resist;

removing the second portion of the second conductive film by removing the resist;

forming a third conductive film so as to cover the first portion of the second conductive film;

selectively etching the first conductive film and the third conductive film so as to form a wiring;

forming a gate insulating film so as to cover the wiring;

forming a first semiconductor film over the gate insulating film;

selectively forming a channel protective film over the first semiconductor film;

forming a second semiconductor film doped with an impurity element over the channel protective film and the first semiconductor film;

forming a fourth conductive film over the second semiconductor film;

selectively etching the first semiconductor film, the second semiconductor film, and the fourth conductive film;

forming a protective film over the fourth conductive film;

selectively etching the protective film; and

forming a pixel electrode so as to be

electrically connected to the fourth conductive film.

10. The manufacturing method of a display device according to claim 2, further comprising a step of forming a protective conductive film over the second conductive film.

11. The manufacturing method of a display device according to claim 2, wherein the resist is formed so that an end portion of the resist has an inverse tapered shape.

12. The manufacturing method of a display device according to claim 2, wherein the resist is formed so that an end portion of the resist has a tapered shape which is almost perpendicular, or which has a taper angle of greater than or equal to 75°

and less than 90°

.

13. The manufacturing method of a display device according to claim 2, wherein the resist is formed by a droplet discharging method.

14. The manufacturing method of a display device according to claim 2, wherein the wiring has a plurality of wires, and

wherein the second conductive film is formed such that resistances of the plurality of wires, whose length are different from each other, are almost equal.

38. The manufacturing method of a display device according to claim 2,

wherein at least one of the first conductive film and the third conductive film is formed by a sputtering method or a CVD method.

44. The manufacturing method of a display device according to claim 2, wherein at least one of the first conductive film and the third conductive film comprises at least one of tungsten, molybdenum, chromium and titanium.

3. A manufacturing method of a display device, comprising the steps of:

forming a first conductive film;

then

selectively forming a resist over the first conductive film;

forming a second conductive film, wherein the second conductive film includes a first portion over the first conductive film and film a second portion over the resist;

removing the second portion of the second conductive film by removing the resist;

forming a third conductive film so as to cover the first portion of the second conductive film;

selectively etching the first conductive film and the third conductive film so as to form a wiring;

forming a gate insulating film so as to cover the wiring;

forming a first semiconductor film over the gate insulating film;

forming a second semiconductor film doped with an impurity element over the first semiconductor film;

selectively etching the first semiconductor film and the second semiconductor film;

forming a fourth conductive film over the first semiconductor film and the second

semiconductor film;

selectively etching the second semiconductor film, and the fourth conductive film;

forming a protective film over the fourth conductive film;

selectively etching the protective film;

and forming a pixel electrode so as to be electrically connected to the fourth conductive film.

15. The manufacturing method of a display device according to claim 3, further comprising a step of forming a protective conductive film over the second conductive film.

16. The manufacturing method of a display device according to claim 3, wherein the resist is formed so that an end portion of the resist has an inverse tapered shape.

17. The manufacturing method of a display device according to claim 3, wherein the resist is formed so that an end portion of the resist has a tapered shape which is almost perpendicular, or which has a taper angle of greater than or equal to 75°

and less than 90°

.

18. The manufacturing method of a display device according to claim 3, wherein the resist is formed by a droplet discharging method.

19. The manufacturing method of a display device according to claim 3, wherein the wiring has a plurality of wires, and

wherein the second conductive film is formed such that resistances of the plurality of wires, whose length are different from each other, are almost equal.

39. The manufacturing method of a display device according to claim 3,

wherein at least one of the first conductive film and the third conductive film is formed by a sputtering method or a CVD method.

45. The manufacturing method of a display device according to claim 3, wherein at least one of the first conductive film and the third conductive film comprises at least one of tungsten, molybdenum, chromium and titanium.

4. A manufacturing method of a display device, comprising the steps of:

forming an insulating film;

then

forming a semiconductor film over the insulating film;

selectively etching the semiconductor film;

forming a gate insulating film over the semiconductor film which has been selectively etched;

forming a first conductive film over the gate insulating film;

selectively forming a resist over the first conductive film;

forming a second conductive film, wherein the second conductive film includes a first portion over the first conductive film and a second conductive film a second portion over the resist;

removing the second portion of the second conductive film by removing the resist;

forming a third conductive film so as to cover the first portion of the second conductive film; and

selectively etching the first conductive film and the third conductive film so as to form a wiring.

20. The manufacturing method of a display device according to claim 4, further comprising a step of forming a protective conductive film over the second conductive film.

21. The manufacturing method of a display device according to claim 4, wherein the resist is formed so that an end portion of the resist has an inverse tapered shape.

22. The manufacturing method of a display device according to claim 4, wherein the resist is formed so that an end portion of the resist has a tapered shape which is almost perpendicular, or which has a taper angle of greater than or equal to 75°

and less than 90°

.

23. The manufacturing method of a display device according to claim 4, wherein the resist is formed by a droplet discharging method.

24. The manufacturing method of a display device according to claim 4, wherein the wiring has a plurality of wires, and

wherein the second conductive film is formed such that resistances of the plurality of wires, whose length are different from each other, are almost equal.

40. The manufacturing method of a display device according to claim 4,

wherein at least one of the first conductive film and the third conductive film is formed by a sputtering method or a CVD method.

46. The manufacturing method of a display device according to claim 4, wherein at least one of the first conductive film and the third conductive film comprises at least one of tungsten, molybdenum, chromium and titanium.

25. A manufacturing method of a display device, comprising the steps of:

forming a first conductive film;

then

selectively forming a first resist over the first conductive film;

forming a second conductive film, wherein the second conductive film includes a first portion over the first conductive film and a second portion over the first resist;

removing the second portion of the second conductive film formed by removing the first resist;

forming a third conductive film so as to cover the first portion of the second conductive film;

selectively etching the first conductive film and the third conductive film so as to form a first wiring;

forming a gate insulating film so as to cover the first wiring;

forming a first semiconductor film over the gate insulating film;

forming a second semiconductor film doped with an impurity element over the first semiconductor film;

forming a fourth conductive film so as to be electrically connected to the second semiconductor film;

selectively forming a second resist over the fourth conductive film;

forming a fifth conductive film over the fourth conductive film and the second resist;

removing the fifth conductive film formed over the second resist by removing the second resist;

forming a sixth conductive film so as to cover the fifth conductive film formed over the fourth conductive film; and

selectively etching the fourth conductive film and the sixth conductive film so as to form a second wiring.

27. The manufacturing method of a display device according to claim 25, further comprising the step of forming a protective conductive film over at least one of the second conductive film and the fifth conductive film.

28. The manufacturing method of a display device according to claim 25, wherein at least one of an end portion of the first resist and an end portion of the second resist has an inverse tapered shape.

29. The manufacturing method of a display device according to claim 25, wherein at least one of an end portion of the first resist and an end portion of the second resist has a tapered shape which is almost perpendicular, or which has a taper angle of greater than or equal to 75°

and less than 90°

.

30. The manufacturing method of a display device according to claim 25, wherein at least one of the first resist and the second resist is formed by a droplet discharging method.

31. The manufacturing method of a display device according to claim 25, wherein the first wiring has a plurality of first wires,

wherein the second conductive film is formed such that resistances of the plurality of first wires, whose length are different from each other, are almost equal,

wherein the second wiring has a plurality of second wires, and

wherein the fifth conductive film is formed such that resistances of the plurality of second wires, whose length are different from each other, are almost equal.

41. The manufacturing method of a display device according to claim 25,

wherein at least one of the first conductive film and the third conductive film is formed by a sputtering method or a CVD method.

47. The manufacturing method of a display device according to claim 25, wherein at least one of the first conductive film and the third conductive film comprises at least one of tungsten, molybdenum, chromium and titanium.

26. A manufacturing method of a display device, comprising the steps of:

forming a first insulating film;

then

forming a semiconductor film over the first insulating film;

selectively etching the semiconductor film;

forming a gate insulating film over the semiconductor film which has been selectively etched;

forming a first conductive film over the gate insulating film;

selectively forming a first resist over the first conductive film;

forming a second conductive film, wherein the second conductive film includes a first portion over the first conductive film and a second portion over the first resist;

removing the second portion of the second conductive film removing the first resist;

forming a third conductive film so as to cover the first portion of the second conductive film;

selectively etching the first conductive film and the third conductive film so as to form a first wiring;

forming a second insulating film over the first wiring;

selectively etching the gate insulating film and the second insulating film;

forming a fourth conductive film so as to be electrically connected to the semiconductor film;

selectively forming a second resist over the fourth conductive film;

forming a fifth conductive film over the fourth conductive film and the second resist;

removing the fifth conductive film formed over the second resist by removing the second resist;

forming a sixth conductive film so as to cover the fifth conductive film formed over the fourth conductive film; and

selectively etching the fourth conductive film and the sixth conductive film so as to form a second wiring.

32. The manufacturing method of a display device according to claim 26, further comprising the step of forming a protective conductive film over at least one of the second conductive film and the fifth conductive film.

33. The manufacturing method of a display device according to claim 26, wherein at least one of an end portion of the first resist and an end portion of the second resist has an inverse tapered shape.

34. The manufacturing method of a display device according to claim 26, wherein at least one of an end portion of the first resist and an end portion of the second resist has a tapered shape which is almost perpendicular, or which has a taper angle of greater than or equal to 75°

and less than 90°

.

35. The manufacturing method of a display device according to claim 26, wherein at least one of the first resist and the second resist is formed by a droplet discharging method.

36. The manufacturing method of a display device according to claim 26, wherein the first wiring has a plurality of first wires,

wherein the second conductive film is formed such that resistances of the plurality of first wires, whose length are different from each other, are almost equal,

wherein the second wiring has a plurality of second wires, and

wherein the fifth conductive film is formed such that resistances of the plurality of second wires, whose length are different from each other, are almost equal.

42. The manufacturing method of a display device according to claim 26,

wherein at least one of the first conductive film and the third conductive film is formed by a sputtering method or a CVD method.

48. The manufacturing method of a display device according to claim 26, wherein at least one of the first conductive film and the third conductive film comprises at least one of tungsten, molybdenum, chromium and titanium.