Thin film transistor incorporating an integrated capacitor and pixel region
First Claim
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1. A display device comprising:
- a substrate;
a thin film transistor over the substrate, the thin film transistor comprising a semiconductor layer and a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween;
a wiring formed over the substrate;
a first insulating film comprising a silicon nitride over the thin film transistor and the wiring;
a second insulating film over the first insulating film, wherein the second insulating film has at least one opening over the wiring;
a pixel electrode over the second insulating film, the pixel electrode being electrically connected to the thin film transistor, wherein the pixel electrode contacts an upper surface of the first insulating film in the opening of the second insulating film; and
a capacitor comprising the wiring, the pixel electrode, and the first insulating film.
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Abstract
A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
138 Citations
36 Claims
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1. A display device comprising:
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a substrate; a thin film transistor over the substrate, the thin film transistor comprising a semiconductor layer and a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween; a wiring formed over the substrate; a first insulating film comprising a silicon nitride over the thin film transistor and the wiring; a second insulating film over the first insulating film, wherein the second insulating film has at least one opening over the wiring; a pixel electrode over the second insulating film, the pixel electrode being electrically connected to the thin film transistor, wherein the pixel electrode contacts an upper surface of the first insulating film in the opening of the second insulating film; and a capacitor comprising the wiring, the pixel electrode, and the first insulating film. - View Dependent Claims (5, 6, 7, 19, 23, 27, 31)
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2. A display device comprising:
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a substrate; a thin film transistor over the substrate, the thin film transistor comprising a semiconductor layer and a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween; a wiring formed over the substrate; a first insulating film comprising a silicon nitride over the thin film transistor; a second insulating film over the first insulating film, wherein the second insulating film has at least one opening over the wiring; a pixel electrode over the second insulating film, the pixel electrode being electrically connected to the thin film transistor, wherein the pixel electrode contacts an upper surface of the first insulating film in the opening of the second insulating film; and a capacitor comprising the wiring, the pixel electrode, and the first insulating film, wherein the wiring and the gate electrode comprise the same material. - View Dependent Claims (8, 9, 10, 20, 24, 28, 32)
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3. A display device comprising:
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a substrate; a thin film transistor over the substrate, the thin film transistor comprising a semiconductor layer and a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween; a first wiring formed over the substrate; a first insulating film comprising a silicon nitride over the thin film transistor; a second insulating film over the first insulating film, wherein the second insulating film has at least one opening over the first wiring; a second wiring electrically connected to one of a source region and a drain region of the thin film transistor; a pixel electrode over the second insulating film, the pixel electrode being electrically connected to the second wiring, wherein the pixel electrode contacts an upper surface of the first insulating film in the opening of the second insulating film; and a capacitor comprising the first wiring, the pixel electrode, and the first insulating film. - View Dependent Claims (11, 12, 13, 14, 18, 21, 25, 29, 33, 35)
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4. A display device comprising:
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a substrate; a thin film transistor over the substrate, the thin film transistor comprising a semiconductor layer and a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween; a first wiring formed over the substrate; a first insulating film comprising a silicon nitride over the thin film transistor; a second insulating film over the first insulating film, wherein the second insulating film has at least one opening over the first wiring; a second wiring electrically connected to one of a source region and a drain region of the thin film transistor; a pixel electrode being electrically connected to the second wiring, wherein the pixel electrode contacts an upper surface of the first insulating film in the opening of the second insulating film; and a capacitor comprising the first wiring, the pixel electrode, and the first insulating film, wherein the wiring and the gate electrode comprise the same material. - View Dependent Claims (15, 16, 17, 22, 26, 30, 34, 36)
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Specification