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Vertical light emitting diode device structure

DC
  • US 7,615,789 B2
  • Filed: 05/09/2006
  • Issued: 11/10/2009
  • Est. Priority Date: 05/09/2006
  • Status: Active Grant
First Claim
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1. A vertical light-emitting diode (VLED) structure comprising:

  • a metal layer;

    a reflective layer disposed above the metal layer;

    a p-doped layer disposed above the reflective layer;

    a spacer disposed above the p-doped layer, wherein the spacer comprises a slightly Mg-doped chemical compound with n-type conduction characteristics;

    an active layer disposed above the spacer; and

    an n-doped layer disposed directly above the active layer, wherein the n-doped layer has an n-electrode for external connection.

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