Semiconductor light emitting device having an electrode made of a conductive oxide
First Claim
1. A semiconductor light emitting device comprising:
- a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked in this order;
electrodes respectively connected to the first conductive type and the second conductive type semiconductor layers;
the electrode connected to said second conductive type semiconductor layer comprising a lower conductive oxide film, an upper conductive oxide film disposed on said lower conductive oxide film so that a portion of a surface of said lower conductive oxide film is exposed, and a metal film disposed on said upper conductive oxide film; and
said upper conductive oxide film and said lower conductive oxide film each comprising an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).
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Accused Products
Abstract
A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).
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Citations
20 Claims
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1. A semiconductor light emitting device comprising:
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a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked in this order; electrodes respectively connected to the first conductive type and the second conductive type semiconductor layers; the electrode connected to said second conductive type semiconductor layer comprising a lower conductive oxide film, an upper conductive oxide film disposed on said lower conductive oxide film so that a portion of a surface of said lower conductive oxide film is exposed, and a metal film disposed on said upper conductive oxide film; and said upper conductive oxide film and said lower conductive oxide film each comprising an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor light emitting device comprising:
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a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked in this order; electrodes respectively connected to the first conductive type and the second conductive type semiconductor layers; the electrode connected to said second conductive type semiconductor layer comprising a lower conductive oxide film, an upper conductive oxide film disposed on said lower conductive oxide film so that a portion of a surface of said lower conductive oxide film is exposed, and a metal film disposed on said upper conductive oxide film; and said upper conductive oxide film and said lower conductive oxide film each comprising an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg), and wherein the electrode connected to said first conductive type semiconductor layer comprises a first conductive oxide film and a metal film disposed on said first conductive oxide film, and said first conductive oxide film included in said electrode connected to said first conductive type semiconductor layer comprises an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg), and wherein the upper conductive oxide film and said first conductive oxide film have substantially the same composition and substantially the same thickness, and wherein the lower conductive oxide film has a thickness described by
A·
λ
/4n1±
X
(1)(wherein A is an odd number, λ
is a wavelength of light emitted from the light emitting layer (Å
), n1 is refractive index of the lower conductive oxide film, X is film thickness (Å
) which is 0 to 20% of an optical thin film (λ
/4n)), andwherein the upper conductive oxide film has a thickness described by
B·
λ
/4n2+α
/2
(2)(wherein B is an even number, λ
is the wavelength of light emitted from the light emitting layer (Å
), n2 is the refractive index of the upper conductive oxide film, and α
is distance of phase shift (Å
)).
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19. A semiconductor light emitting device comprising:
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a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked in this order; electrodes respectively connected to the first conductive type and the second conductive type semiconductor layers; the electrode connected to said second conductive type semiconductor layer comprising a lower conductive oxide film, an upper conductive oxide film disposed on said lower conductive oxide film so that a portion of a surface of said lower conductive oxide film is exposed, and a metal film disposed on said upper conductive oxide film; and said upper conductive oxide film and said lower conductive oxide film each comprising an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg) and wherein the lower conductive oxide film has a thickness described by
A·
λ
/4n1±
X
(1)(wherein A is an odd number, λ
is a wavelength of light emitted from the light emitting layer (Å
), n1 is refractive index of the lower conductive oxide film, X is film thickness (Å
) which is 0 to 20% of an optical thin film (λ
/4n)), andwherein the upper conductive oxide film has a thickness described by
B·
λ
/4n2+α
/2
(2)(wherein B is an even number, λ
is the wavelength of light emitted from the light emitting layer (Å
), n2 is the refractive index of the upper conductive oxide film, and α
is distance of phase shift (Å
)), andwherein the metal film is at least one of a single-layer film and a multi-layer film made of W, Rh, Ag, Pt, Pd, and Al.
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20. A semiconductor light emitting device comprising:
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a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked in this order; electrodes respectively connected to the first conductive type and the second conductive type semiconductor layers; the electrode connected to said second conductive type semiconductor layer comprising a lower conductive oxide film, an upper conductive oxide film disposed on said lower conductive oxide film so that a portion of a surface of said lower conductive oxide film is exposed, and a metal film disposed on said upper conductive oxide film; and said upper conductive oxide film and said lower conductive oxide film each comprising an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg); wherein the electrode connected to said first conductive type semiconductor layer comprises a conductive oxide film and a metal film disposed on said conductive oxide film, and said conductive oxide film included in said electrode connected to said first conductive type semiconductor layer comprises an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).
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Specification