Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same
First Claim
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1. A thin-film transistor comprising:
- a gate electrode formed on a base substrate;
an active layer formed on the gate electrode to cover the gate electrode, the active layer containing a first material;
a source electrode and a drain electrode formed on the active layer, the source electrode being spaced apart from the drain electrode by a predetermined distance; and
a buffer layer formed between the active layer and the source electrode, and between the active layer and the drain electrode, the buffer layer formed to suppress oxidation of the active layer, wherein the buffer layer contains a second material that reacts with the first material in the active layer to form a compound,wherein the second material has a substantially continuously varying layer content ratio corresponding to a thickness of the layers in the buffer layer.
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Abstract
A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.
13 Citations
17 Claims
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1. A thin-film transistor comprising:
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a gate electrode formed on a base substrate; an active layer formed on the gate electrode to cover the gate electrode, the active layer containing a first material; a source electrode and a drain electrode formed on the active layer, the source electrode being spaced apart from the drain electrode by a predetermined distance; and a buffer layer formed between the active layer and the source electrode, and between the active layer and the drain electrode, the buffer layer formed to suppress oxidation of the active layer, wherein the buffer layer contains a second material that reacts with the first material in the active layer to form a compound, wherein the second material has a substantially continuously varying layer content ratio corresponding to a thickness of the layers in the buffer layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A liquid crystal display panel comprising:
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a first substrate having a thin-film transistor; a second substrate disposed to face the first substrate; and a liquid crystal layer interposed between the first substrate and the second substrate, wherein the thin-film transistor comprises; a gate electrode formed on the first substrate; an active layer formed on the gate electrode to cover the gate electrode, the active layer containing a first material; a source electrode and a drain electrode formed on the active layer, the source electrode being separated from the drain electrode by a predetermined distance; and a buffer layer formed between the active layer and the source electrode, and between the active layer and the drain electrode, the buffer layer formed to suppress oxidation of the active layer, wherein the buffer layer contains a second material that reacts with the first material in the active layer to form a compound, wherein the second material has a varying layer content ratio corresponding to a thickness of the layers in the buffer layer. - View Dependent Claims (13)
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14. An electro-luminescence display panel comprising:
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a base substrate; a switching thin-film transistor formed on the base substrate; a driving thin-film transistor formed on the base substrate, the driving thin film transistor electrically connected to the switching thin-film transistor; and an electro-luminescence device connected to the driving thin-film transistor and configured to generate light, wherein the driving thin-film transistor comprises; a driving gate electrode formed on the base substrate; a driving active layer formed on the driving gate electrode to cover the driving gate electrode, the driving active layer containing a first material; a driving source electrode and a driving drain electrode formed on the driving active layer and separated by a predetermined distance; and a driving buffer layer formed between the driving active layer and the driving source electrode, and between the driving active layer and the driving drain electrode, the driving buffer layer formed to suppress oxidation of the driving active layer, wherein the driving buffer layer contains a second material that reacts with the first material in the active layer to form a compound. - View Dependent Claims (15, 16, 17)
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Specification