Film stack for manufacturing micro-electromechanical systems (MEMS) devices
First Claim
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1. A film stack for the production of MEMS devices, the film stack comprising:
- a substrate;
a first layer formed over the substrate, said first layer comprising a conductive material;
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a second layer formed over the first layer, said second layer comprising an insulator material; and
a third layer formed on the second layer, said third layer comprising a sacrificial material, wherein said third layer is formed prior to processing of said first and second layers which takes place after the deposition of said first and second layers.
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Abstract
This invention provides a precursor film stack for use in the production of MEMS devices. The precursor film stack comprises a carrier substrate, a first layer formed on the carrier substrate, a second layer of an insulator material formed on the first layer, and a third layer of a sacrificial material formed on the second layer.
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Citations
22 Claims
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1. A film stack for the production of MEMS devices, the film stack comprising:
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a substrate; a first layer formed over the substrate, said first layer comprising a conductive material;
;a second layer formed over the first layer, said second layer comprising an insulator material; and a third layer formed on the second layer, said third layer comprising a sacrificial material, wherein said third layer is formed prior to processing of said first and second layers which takes place after the deposition of said first and second layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification