Wavelength-tunable optical ring resonators

• US 7,616,850 B1
• Filed: 04/09/2008
• Issued: 11/10/2009
• Est. Priority Date: 04/09/2008
• Status: Active Grant

• Current Assignee: National Technology & Engineering Solutions Of Sandia LLC (Honeywell International Inc.)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Trotter, Douglas C., Nielson, Gregory N., Watts, Michael R., Young, Ralph W.
• Primary Examiner(s): Rahll; Jerry T
• Application Number:
  US12/100,004
• Time in Patent Office: 580 Days
• Field of Search: 385/2, 385/32, 385/50
• US Class Current: 385/32
• CPC Class Codes: G02B 6/29335 Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity wavelength selective means based on resonator cavity coupled non-evanescently G02B6/29356, G02B6/29358
• CPC Class Codes: G02B 6/29338 Loop resonators
• CPC Class Codes: G02F 1/0147 based on thermo-optic effects G02F1/132 takes precedence
• CPC Class Codes: G02F 1/225 in an optical waveguide structure
• CPC Class Codes: G02F 1/2257 the optical waveguides being made of semiconducting material
• CPC Class Codes: G02F 2203/15 involving resonance effects, e.g. resonantly enhanced interaction
• CPC Class Codes: G02F 2203/20 Intrinsic phase difference, i.e. optical bias, of an optical modulator; Methods for the pre-set thereof

Abstract

Optical ring resonator devices are disclosed that can be used for optical filtering, modulation or switching, or for use as photodetectors or sensors. These devices can be formed as microdisk ring resonators, or as open-ring resonators with an optical waveguide having a width that varies adiabatically. Electrical and mechanical connections to the open-ring resonators are made near a maximum width of the optical waveguide to minimize losses and thereby provide a high resonator Q. The ring resonators can be tuned using an integral electrical heater, or an integral semiconductor junction.

Claims

1. An optical ring resonator apparatus, comprising:

an optical waveguide ring having a width which adiabatically varies with distance around the optical waveguide ring between a minimum value and a maximum value;

at least one connecting member in contact with the optical waveguide ring at a location proximate to the maximum value of the width of the optical waveguide ring; and

an optical waveguide located near the optical waveguide ring at a location proximate to the minimum value of the width of the optical waveguide ring to couple light between the optical waveguide and the optical waveguide ring.

2. The apparatus of claim 1 wherein the at least one connecting member suspends the optical waveguide ring above a substrate.

3. The apparatus of claim 1 wherein the at least one connecting member provides an electrical connection to the optical waveguide ring.

4. The apparatus of claim 1 wherein the optical waveguide ring includes two vertically-stacked regions of opposite doping types which form a vertical semiconductor junction, with the vertical semiconductor junction being located proximate to the maximum value of the width of the optical waveguide ring and being electrically connected to a pair of electrical contacts located inside of the optical waveguide ring to vary a resonant frequency of the optical waveguide ring in response to a bias voltage applied between the pair of electrical contacts.

5. The apparatus of claim 1 wherein the optical waveguide ring includes two regions of opposite doping types arranged in a circumferential direction around the optical waveguide ring to form a horizontal semiconductor junction, with the horizontal semiconductor junction being electrically connected to a pair of electrical contacts located inside of the optical waveguide ring to vary a resonant frequency of the optical waveguide ring in response to a bias voltage applied between the pair of electrical contacts.

6. The apparatus of claim 1 further comprising an electrical heater formed from a portion of the optical waveguide ring.

7. The apparatus of claim 6 wherein the portion of the optical waveguide ring wherefrom the electrical heater is formed comprises an impurity-doped region.

8. The apparatus of claim 6 wherein a resonant frequency of the optical waveguide ring varies in response to a voltage applied to the electrical heater.

9. The apparatus of claim 1 further comprising a silicon-on-insulator substrate which comprises a monocrystalline silicon body and a monocrystalline silicon layer sandwiched about a silicon oxide layer, with the optical waveguide ring, the at least one connecting member and the optical waveguide all being formed from the monocrystalline silicon layer.

10. An optical ring resonator apparatus, comprising:

at least one optical ring resonator supported on a substrate, with each optical ring resonator having a width which adiabatically varies with distance around that optical ring resonator between a minimum value and a maximum value of the width;

a pair of electrical contacts located inside of each optical ring resonator, with the pair of electrical contacts being connected to that optical ring resonator at a location proximate to the maximum value of the width thereof; and

at least one optical waveguide supported on the substrate outside of the at least one optical ring resonator at a location proximate to the minimum value of the width of the optical ring resonator.

11. The apparatus of claim 10 wherein the at least one optical ring resonator includes two vertically-stacked regions of opposite doping types which form a vertical semiconductor junction, with the vertical semiconductor junction being connected to the pair of electrical contacts to vary a resonant frequency of the at least one optical ring resonator in response to a bias voltage applied between the pair of electrical contacts.

12. The apparatus of claim 10 wherein the at least one optical ring resonator includes two regions of opposite doping types arranged in a circumferential direction around the optical ring resonator to form a horizontal semiconductor junction, with the horizontal semiconductor junction being connected to the pair of electrical contacts to vary a resonant frequency of the at least one optical ring resonator in response to a bias voltage applied between the pair of electrical contacts.

13. The apparatus of claim 10 wherein the at least one optical ring resonator includes an impurity-doped region which forms an electrical heater and which is connected to the pair of electrical contacts to vary a resonant frequency of the at least one optical ring resonator in response to a voltage applied between the pair of electrical contacts.

14. The apparatus of claim 10 wherein the substrate comprises a silicon-on-insulator substrate which includes a monocrystalline silicon body and a monocrystalline silicon layer sandwiched about a silicon oxide layer, with the at least one optical ring resonator and the at least one optical waveguide being formed from the monocrystalline silicon layer.

15. An optical ring resonator apparatus, comprising:

a substrate;

at least one optical waveguide supported on the substrate;

an optical ring resonator located adjacent to each optical waveguide to couple light therebetween at a resonant frequency of the optical ring resonator, with the optical ring resonator having a width which adiabatically varies with distance around the optical ring resonator between a minimum value and a maximum value of the width;

at least one impurity-doped region located within the optical ring resonator at a location proximate to the maximum value of the width of the optical ring resonator; and

a pair of electrical contacts located inside of the optical ring resonator and connected to the at least one impurity-doped region to provide a voltage thereto to vary the resonant frequency of the optical ring resonator.

16. The apparatus of claim 15 wherein each optical waveguide is located proximate to the minimum value of the width of the optical ring resonator.

17. The apparatus of claim 15 wherein the substrate comprises a silicon-on-insulator substrate having a monocrystalline silicon body and a monocrystalline silicon layer sandwiched about a silicon oxide layer, with the optical ring resonator and each optical waveguide being formed from the monocrystalline silicon layer.

18. The apparatus of claim 15 wherein the at least one impurity-doped region forms an electrical heater.

19. The apparatus of claim 15 wherein the at least one impurity-doped region comprises a p-type-doped region and an n-type-doped region superposed one above the other to form a vertical semiconductor junction.

20. The apparatus of claim 15 wherein the at least one impurity-doped region comprises a p-type-doped region and an n-type-doped region spaced about a circumference of the optical ring resonator to form a horizontal semiconductor junction.

21. The apparatus of claim 15 wherein the pair of electrical contacts comprises an n-type-doped plug and a p-type-doped plug.