Radiation-emitting semiconductor component
First Claim
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1. A radiation-emitting semiconductor component, comprising:
- a semiconductor body with a first active zone and a second active zone arranged downstream of the first active zone in the vertical direction, the first active zone being provided for generating a radiation having a first wavelength λ
1 and the second active zone being provided for generating a radiation having a second wavelength λ
2,wherein the radiation having the first wavelength λ
1 is coherent and the radiation having the second wavelength λ
2 is incoherent, andwherein the first active zone and the second active zone are each electrically driven, the first active zone and the second active zone are monolithically integrated into the semiconductor body, the first active zone is formed in a semiconductor structure comprising an optical resonator, and the second active zone is arranged on the semiconductor structure.
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Abstract
A radiation-emitting semiconductor component comprising a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged above the first active zone, the first active zone being provided for generating a radiation having a first wavelength λ1 (11) and the second active zone being provided for generating a radiation having a second wavelength λ2 (22), the radiation having the first wavelength λ1 being coherent and the radiation having the second wavelength λ2 being incoherent.
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Citations
22 Claims
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1. A radiation-emitting semiconductor component, comprising:
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a semiconductor body with a first active zone and a second active zone arranged downstream of the first active zone in the vertical direction, the first active zone being provided for generating a radiation having a first wavelength λ
1 and the second active zone being provided for generating a radiation having a second wavelength λ
2,wherein the radiation having the first wavelength λ
1 is coherent and the radiation having the second wavelength λ
2 is incoherent, andwherein the first active zone and the second active zone are each electrically driven, the first active zone and the second active zone are monolithically integrated into the semiconductor body, the first active zone is formed in a semiconductor structure comprising an optical resonator, and the second active zone is arranged on the semiconductor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification