Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions

• US 7,622,151 B2
• Filed: 02/05/2004
• Issued: 11/24/2009
• Est. Priority Date: 02/10/1999
• Status: Expired due to Fees

• Current Assignee: Auburn University
• Original Assignee: Auburn University
• Inventors: Tzeng, Yonhua
• Primary Examiner(s): Meeks; Timothy
• Assistant Examiner(s): Gambetta; Kelly M
• Application Number:
  US10/772,740
• Publication Number:
  US 20040157005A1
• Time in Patent Office: 2,119 Days
• Field of Search: 427/248.1, 427/249.1, 427/249.8, 427/249.12
• US Class Current: 427/248.1
• CPC Class Codes: C23C 16/27 Diamond only
• CPC Class Codes: C23C 16/277 using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
• CPC Class Codes: C23C 16/503 using dc or ac discharges
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

Claims

1. A method of forming diamond comprising:

a) providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system;

b) providing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, to a metering valve associated with an inlet of the reaction chamber, wherein the amount of the methanol is greater than the amount of the at least one carbon and oxygen containing compound;

c) passing liquid precursor into the reaction chamber inlet with the metering valve wherein the liquid precursor enters the metering valve as liquid and vaporizes during entry into the reaction chamber inlet to generate vaporized precursor; and

d) subjecting the vaporized precursor, in the absence of a carrier gas and in the absence of a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

2. The method of claim 1, wherein hydrogen gas (H₂) is not used in the reaction chamber.

3. The method of claim 1, wherein the pressure range is from 80 to 130 Torr.

4. The method of claim 1, wherein the pressure range is from 110 to 130 Torr.

5. The method of claim 4, wherein the methanol is from about 50 to 96 weight percent of the liquid precursor.

6. The method of claim 1, wherein the methanol is from about 50 to 96 weight percent of the liquid precursor.

7. The method of claim 1, wherein the methanol is from about 73 to 96 weight percent of the liquid precursor.

8. The method of claim 1, wherein the methanol is from about 90 to 96 weight percent of the liquid precursor.

9. The method of claim 1, wherein the at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one are selected from ethanol, acetone, isopropanol, and combinations thereof.

10. A method of forming diamond comprising:

a) providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system, the reaction chamber being in fluidic communication with a container through a metering valve, wherein the container includes a liquid precursor substantially free of water containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, wherein the amount of the methanol is greater than the amount of the at least one carbon and oxygen containing compound;

b) flowing the liquid precursor into the reaction chamber using the metering valve, in the absence of a gas stream flowing through the metering valve entraining the liquid precursor, wherein the liquid precursor enters the metering valve as liquid and vaporizes during entry into the reaction chamber;

c) subjecting the vaporized precursor to a plasma under conditions effective to disassociate the vaporized precursor in the absence of a carrier gas and in the absence of a reactive gas; and

d) promoting diamond growth on the substrate at a pressure in the range from about 10 to 130 Torr.

11. The method of claim 10, wherein the methanol is from about 50 to 96 weight percent of the liquid precursor, and wherein the pressure range is from 70 to 130 Torr.

12. The method of claim 10, wherein the methanol is from about 73 to 96 weight percent of the liquid precursor, and wherein the pressure range is from 110 to 130 Torr.

13. The method of claim 10, wherein the methanol is from about 90 to 96 weight percent of the liquid precursor, and wherein the pressure range is from 110 to 130 Torr.

14. The method of claim 10, wherein hydrogen gas (H₂) is not used in the reaction chamber.

15. The method of claim 14, wherein the at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one is ethanol.

16. The method of claim 14, wherein the at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one is acetone.

17. The method of claim 14, wherein the at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one is isopropanol.

18. The method of claim 10, wherein the substrate does not include a pre-deposition seeding of diamond particles on the surface of the substrate.

19. The method of claim 10, wherein the substrate is aluminum.

20. The method of claim 10, wherein the metering valve includes a temperature measuring device coupled to the tip of the metering valve, wherein the vaporization of the liquid precursor causes the metering valve to decrease in temperature to a temperature value, wherein the temperature value is correlated to a flow rate of the liquid precursor, wherein the flow rate of the liquid precursor into the reaction chamber can be controlled by opening the metering valve to an extent so that the temperature value is obtained.

21. The method of claim 20, wherein the container includes a volume of the precursor liquid at atmospheric pressure, wherein the liquid precursor is adapted to be replenished during the formation of the diamond without interrupting the formation thereof.

22. The method of claim 10, wherein flowing the liquid precursor into the reaction chamber is controlled by monitoring the metering valve and adjusting a flow of the liquid precursor to maintain a substantially constant temperature.

23. A method of forming diamond without seeding comprising:

a) providing an unseeded substrate in a reaction chamber in a non-magnetic-field microwave plasma system, the reaction chamber being in fluidic communication with a container through a metering valve, wherein the container includes a liquid precursor substantially free of water containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, wherein the amount of the methanol is greater than the amount of the at least one carbon and oxygen containing compound;

b) supplying the liquid precursor into the reaction chamber without interrupting formation of the diamond using the metering valve, in the absence of a gas stream flowing through the metering valve entraining the liquid precursor, wherein the liquid precursor enters the metering valve as liquid and vaporizes during entry into the reaction chamber;

c) subjecting the vaporized precursor to a plasma under conditions effective to disassociate the vaporized precursor in the absence of a carrier gas and in the absence of a reactive gas; and

d) promoting diamond growth on the substrate at a pressure in the range from about 10 to 130 Torr.