Device isolation technology on semiconductor substrate

• US 7,622,369 B1
• Filed: 05/30/2008
• Issued: 11/24/2009
• Est. Priority Date: 05/30/2008
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Lee, Woo Jin, Matsuki, Nobuo, Fukazawa, Atsuki
• Primary Examiner(s): Mulpuri; Savitri
• Assistant Examiner(s): Ahmadi; Mohsen
• Application Number:
  US12/130,522
• Publication Number:
  US 20090298257A1
• Time in Patent Office: 543 Days
• Field of Search: 257/E21.545, 257/E21.546, 257/E21.548, 257/E21.549, 257/E21.55, 257/E21.655
• US Class Current: 438/485
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02222 the compound being a silazane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Abstract

A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon, carbon, nitrogen, hydrogen, oxygen or any combination of two or more thereof; forming a thin insulative layer, by using the flowable, insulative material, in a trench located on a semiconductor substrate wherein the flowable, insulative material forms a conformal coating in a silicon and nitrogen rich condition whereas in a carbon rich condition, the flowable, insulative material vertically grows from the bottom of the trenches; and removing the residual carbon deposits from the flowable, insulative material by multi-step curing, such as O2 thermal annealing, ozone UV curing followed by N2 thermal annealing.

Claims

1. A method of forming a conformal and/or gap-filling insulative layer on a semiconductor substrate having at least one trench, comprising:

providing a silicon-containing gas, a nitrogen-containing gas, and a carbon-containing gas as a process gas, said process gas being capable of filling the trench by forming a flowable, insulative material by plasma reaction at first flow rates of the silicon-containing gas, the nitrogen-containing gas, and the carbon-containing gas;

decreasing a ratio of the first flow rate of the carbon-containing gas to the first flow rate of the silicon-containing gas and/or a ratio of the first flow rate of the carbon-containing gas to the first flow rate of the nitrogen-containing gas;

forming a conformal/flowable, insulative material by plasma reaction at the decreased flow rate(s), thereby forming a conformal coating in the trench as a result of the step of decreasing the ratio(s); and

multi-step post deposition treatment after the step of forming the conformal/flowable, insulative material, said multi-step post deposition treatment comprising heating the substrate including the conformal coating in the presence of oxygen, irradiating the heated substrate with UV light in the presence of oxygen, and annealing the UV irradiated substrate, thereby removing carbon from the conformal coating as a result of the multi-step post deposition treatment.

2. The method according to claim 1, wherein the step of decreasing the ratio(s) comprises decreasing the first flow rate of the carbon-containing gas to a second flow rate of the carbon-containing gas.

3. The method according to claim 1, wherein the substrate has two or more trenches having different sizes, and the step of decreasing the ratio(s) comprises decreasing the ratio(s) so as to form the conformal coating in trench(es) having a width greater than that of other trench(es) while vertically filling the other trench(es) with the conformal/flowable, insulative material in the step of forming the conformal/flowable, insulative material, wherein the ratio(s) controls whether the conformal/flowable, insulative material creates conformal coating or gap-filling in each trench.

4. The method according to claim 1, wherein solely by the step of decreasing the ratio(s), the conformal/flowable, insulative material is controlled to form the conformal coating in the step of forming the conformal/flowable, insulative material.

5. The method according to claim 1, wherein the silicon-containing gas is Si_nH_2n+2 wherein n is an integer.

6. The method according to claim 1, wherein the carbon-containing gas is an organic solvent.

7. The method according to claim 6, wherein the silicon-containing gas is SiH₄ and the step of decreasing the ratio(s) comprises decreasing the ratio of solvent/SiH₄ to less than 8.

8. The method according to claim 1, wherein the carbon-containing gas is an organosilicon precursor.

9. The method according to claim 8, wherein the silicon-containing gas is SiH₄ and the step of decreasing the ratio(s) comprises decreasing the ratio of organosilicon precursor/SiH₄ to less than 1.

10. The method according to claim 1, wherein the nitrogen-containing gas is N₂ or NH₃.

11. The method according to claim 1, wherein the step of forming the conformal/flowable, insulative material is conducted by plasma enhanced chemical vapor deposition at an RF power of between about 10 W and about 1,000 W, a pressure of between about 0.1 Torr and about 10 Torr, and a temperature of between about 0°

C. and about 200°

C.

12. The method according to claim 1, wherein the conformal/flowable, insulative material comprises silicon, carbon, hydrogen, nitrogen, and oxygen.

13. The method according to claim 1, wherein the carbon content in the conformal coating is 1 atomic % or less as a result of the multi-step post deposition treatment.

14. The method according to claim 1, wherein the UV irradiation and the annealing are performed under a nitrogen and/or oxygen ambience.

15. A method of forming a conformal and/or gap-filling insulative layer on a semiconductor substrate having at least one trench, comprising:

forming a conformal/flowable, insulative material in the trench by plasma enhanced chemical vapor deposition, chemical vapor deposition, or spin-on; and

conducting multi-step post deposition treatment comprising heating the substrate in the presence of oxygen, wherein the oxygen-containing treatment comprises exposing the substrate to nitrogen/oxygen, hydrogen/oxygen, or H₂O/oxygen steam at temperature of about 100°

C. to about 400°

C., irradiating the heated substrate with UV light in the presence of oxygen, and annealing the UV irradiated substrate, wherein the UV irradiation comprises irradiating the substrate with UV light having a wavelength of about 130 nm to about 400 nm at a temperature of about 0°

C. to about 500°

C., thereby removing carbon from the conformal/flowable material as a result of the multi-step post deposition treatment.

16. The method according to claim 15, wherein the annealing comprises thermal treating the substrate at a temperature of about 100°

C. to about 500°

C. in a nitrogen ambience.