Fused nanocrystal thin film semiconductor and method
First Claim
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1. A method of fabricating a thin film semiconductor component, the method comprising:
- depositing a nanocrystal seed layer on a substrate within a defined boundary on the substrate, nanocrystals of the nanocrystal seed layer being prefabricated before depositing and arranged in a plurality of layers on the substrate; and
inducing crystallization and aggregation of the nanocrystal seed layer using a reaction solution, such that the thin film semiconductor component is formed, the induced crystallization and aggregation creating a merged-domain layer in the nanocrystal seed layer adjacent to a top surface of the thin film semiconductor component,wherein the thin film semiconductor component is formed at a reaction temperature below a boiling point of the reaction solution.
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Abstract
A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.
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Citations
16 Claims
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1. A method of fabricating a thin film semiconductor component, the method comprising:
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depositing a nanocrystal seed layer on a substrate within a defined boundary on the substrate, nanocrystals of the nanocrystal seed layer being prefabricated before depositing and arranged in a plurality of layers on the substrate; and inducing crystallization and aggregation of the nanocrystal seed layer using a reaction solution, such that the thin film semiconductor component is formed, the induced crystallization and aggregation creating a merged-domain layer in the nanocrystal seed layer adjacent to a top surface of the thin film semiconductor component, wherein the thin film semiconductor component is formed at a reaction temperature below a boiling point of the reaction solution. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of producing a metal-oxide thin film transistor, the method comprising:
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defining a reaction well on a substrate, the reaction well establishing an extent of a channel of the metal-oxide thin film transistor; creating a metal-oxide nanocrystal seed layer within the defined reaction well, nanocrystals of the nanocrystal seed layer being prefabricated before creating the metal-oxide nanocrystal seed layer and arranged in a plurality of layers within the reaction well; and fusing the metal-oxide nanocrystal seed layer to form a merged-domain layer in the nanocrystal seed layer using liquid-phase deposition within the reaction well, the merged-domain layer being adjacent to a top surface of the nanocrystal seed layer, wherein the liquid-phase deposition crystallizes and aggregates an upper portion of the metal-oxide nanocrystal seed layer into the merged-domain layer to form a thin film metal-oxide semiconductor, the thin film metal-oxide semiconductor providing the channel of the metal-oxide thin film transistor. - View Dependent Claims (14, 15, 16)
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Specification