Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- an element formation layer including a first transistor and a second transistor which are provided over a substrate;
a memory element provided over the element formation layer; and
a sensor portion provided above the memory element,wherein the memory element has a layered structure including a first conductive layer, an organic compound layer, and a second conductive layer,wherein the first conductive layer is electrically connected to the first transistor, andwherein the sensor portion is electrically connected to the second transistor.
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Abstract
It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.
30 Citations
53 Claims
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1. A semiconductor device comprising:
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an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, an organic compound layer, and a second conductive layer, wherein the first conductive layer is electrically connected to the first transistor, and wherein the sensor portion is electrically connected to the second transistor. - View Dependent Claims (4, 14, 15, 16, 17, 18, 19)
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2. A semiconductor device comprising:
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an element formation layer including a first transistor, a second transistor, and a third transistor which are provided over a substrate; a memory element provided over the element formation layer; a conductive layer which functions as an antenna; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, an organic compound layer, and a second conductive layer, wherein the first conductive layer is electrically connected to the first transistor, wherein the sensor portion is electrically connected to the second transistor, and wherein the conductive layer which functions as the antenna is electrically connected to the third transistor. - View Dependent Claims (3, 20, 24, 29, 34, 39, 44, 49)
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5. A semiconductor device comprising:
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an element formation layer including a first transistor, a second transistor, and a sensor portion which are provided over a substrate; and a memory element provided over the element formation layer, wherein the memory element has a layered structure including a first conductive layer, an organic compound layer, and a second conductive layer, wherein the first conductive layer is electrically connected to the first transistor, and wherein the sensor portion is electrically connected to the second transistor. - View Dependent Claims (8, 25, 30, 35, 40, 45, 50)
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6. A semiconductor device comprising:
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an element formation layer including a first transistor, a second transistor, a third transistor, and a sensor portion which are provided over a substrate; a memory element provided over the element formation layer; and a conductive layer which functions as an antenna, wherein the memory element has a layered structure including a first conductive layer, an organic compound layer, and a second conductive layer, wherein the first conductive layer is electrically connected to the first transistor, and wherein the sensor portion is electrically connected to the second transistor, and wherein the conductive layer which functions as the antenna is electrically connected to the third transistor. - View Dependent Claims (7, 21, 26, 31, 36, 41, 46, 51)
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9. A semiconductor device comprising:
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an element formation layer including a first transistor and a second transistor which are provided over a substrate; and a memory element and a sensor portion which are provided over the element formation layer, wherein the memory element has a layered structure including a first conductive layer, a first organic compound layer, and a second conductive layer, wherein the sensor portion has a layered structure including a third conductive layer, a second organic compound layer and a fourth conductive layer, wherein the first conductive layer is electrically connected to the first transistor, and wherein the third conductive layer is electrically connected to the second transistor. - View Dependent Claims (12, 13, 27, 32, 37, 42, 47, 52)
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10. A semiconductor device comprising:
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an element formation layer including a first transistor, a second transistor, and a third transistor which are provided over a substrate; a memory element and a sensor portion which are provided over the element formation layer; and a conductive layer which functions as an antenna, wherein the memory element has a layered structure including a first conductive layer, a first organic compound layer, and a second conductive layer, wherein the sensor portion has a layered structure including a third conductive layer, a second organic compound layer, and a fourth conductive layer, wherein the first conductive layer is electrically connected to the first transistor, wherein the third conductive layer is electrically connected to the second transistor, and wherein the conductive layer which functions as the antenna is electrically connected to the third transistor. - View Dependent Claims (11, 22, 23, 28, 33, 38, 43, 48, 53)
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Specification