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III-nitride compound semiconductor light emitting device

  • US 7,622,742 B2
  • Filed: 07/02/2004
  • Issued: 11/24/2009
  • Est. Priority Date: 07/03/2003
  • Status: Expired due to Fees
First Claim
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1. A III-nitride compound semiconductor light-emitting device comprising:

  • a plurality of III-nitride compound semiconductor layers that are epitaxially grown using a substrate, the plurality of III-nitride compound semiconductor layers including;

    an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen,an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, andan n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, andwherein the n-type Al(x)ln(y)Ga(1-x-y)N layer has a top surface which is exposed by etching, the exposed top surface includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and a top surface of the region for scribing and breaking the device including a roughened surface such that light generated from the active layer escapes outwardly from the device through said roughened surface.

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