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Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device

  • US 7,622,745 B2
  • Filed: 08/18/2006
  • Issued: 11/24/2009
  • Est. Priority Date: 08/30/2005
  • Status: Expired due to Fees
First Claim
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1. An epitaxial wafer for a semiconductor light emitting device, comprising:

  • an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type cap layer sequentially grown on an n-type substrate,wherein a p-type dopant of the p-type cap layer is Zn and a C-doped p-type AlGaAs layer is interposed between the p-type cladding layer and the p-type cap layer,wherein the epitaxial wafer for the semiconductor light emitting device further comprises;

    a p-type intermediate layer interposed between the C-doped p-type AlGaAs layer and the p-type cap layer;

    a second p-type cladding layer; and

    a p-type etching stopper layer interposed between the p-type cladding layer and the second p-type cladding layer, andwherein the C-doped p-type AlGaAs layer is interposed between the second p-type cladding layer and the p-type intermediate layer.

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