Highly reflective mounting arrangement for LEDs
First Claim
Patent Images
1. A device capable of emitting light about a predetermined nominal wavelength in response to an applied electric current comprising:
- a light emitting portion comprising at least one semiconductor material;
first optically transmissive, ohmic contact layer coupled to the light emitting portion;
second optically transmissive, dielectric layer with a refractive index less than the at least one semiconductor material and of a thickness greater than one-quarter wavelength of the predetermined nominal wavelength divided by the index of refraction of the second optically transmissive, dielectric layer coupled to the first optically transmissive, ohmic contact layer;
one or more third layers wherein each one or more third layers comprises a first dielectric layer of high-index of refraction and a second dielectric layer of low-index of refraction wherein the first dielectric layer is of a thickness about mλ
/4nH, and the second dielectric layer is of a thickness about kλ
/4nL; and
a metallic layer coupled to the one or more third layers and in contact with the second optically transmissive, dielectric layer and to the first optically transmissive, ohmic contact layer by more than one via through the one or more third layers and the second optically transmissive dielectric layer;
wherein the reflectivity of the metallic layer to the predetermined nominal wavelength is greater than about 50 percent.
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Abstract
A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.
117 Citations
23 Claims
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1. A device capable of emitting light about a predetermined nominal wavelength in response to an applied electric current comprising:
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a light emitting portion comprising at least one semiconductor material; first optically transmissive, ohmic contact layer coupled to the light emitting portion; second optically transmissive, dielectric layer with a refractive index less than the at least one semiconductor material and of a thickness greater than one-quarter wavelength of the predetermined nominal wavelength divided by the index of refraction of the second optically transmissive, dielectric layer coupled to the first optically transmissive, ohmic contact layer; one or more third layers wherein each one or more third layers comprises a first dielectric layer of high-index of refraction and a second dielectric layer of low-index of refraction wherein the first dielectric layer is of a thickness about mλ
/4nH, and the second dielectric layer is of a thickness about kλ
/4nL; anda metallic layer coupled to the one or more third layers and in contact with the second optically transmissive, dielectric layer and to the first optically transmissive, ohmic contact layer by more than one via through the one or more third layers and the second optically transmissive dielectric layer;
wherein the reflectivity of the metallic layer to the predetermined nominal wavelength is greater than about 50 percent. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A device capable of emitting light about a predetermined nominal wavelength in response to an applied electric current comprising:
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a light emitting portion comprising at least one semiconductor material and a first and second surface wherein the light is emitted from the first and second surfaces and the second surface is substantially coupled to an optically transmissive, ohmic contact layer; first optically transmissive dielectric layer with a refractive index less than the at least one semiconductor material and of a thickness greater than one-quarter wavelength of the predetermined nominal wavelength divided by the index of refraction of the first optically transmissive, dielectric layer coupled to the optically transmissive, ohmic contact layer one or more second layers coupled to the first optically transmissive dielectric layer comprising a first dielectric layer of high-index of refraction and a second dielectric layer of low-index of refraction wherein the first dielectric layer is of a thickness about mλ
/4nH, and the second dielectric layer is of a thickness about kλ
/4nL, where m and k are odd integers, λ
is the predetermined nominal wavelength, nH is the refractive index of the high-index of refraction dielectric layer and nL is the refractive index of the low-index of refraction dielectric layer;a metallic layer coupled to the one or more second layers and in contact with the first optically transmissive dielectric layer and to the optically transmissive, ohmic contact layer by more than one via through the one or more second layers and the first optically transmissive dielectric layer;
wherein the reflectivity of the metallic layer to the predetermined wavelength is greater than 50 percent; anda means for mounting the light emitting device;
wherein the metallic layer is thermally coupled to the means for mounting and makes at least one electrical contact to the means for mounting. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A device capable of emitting light about a predetermined wavelength in response to an applied electric current comprising:
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a light emitting portion comprising at least one semiconductor material and a first and second surface wherein the light is emitted from the first and second surfaces and the second surface is substantially coupled to an optically transmissive, ohmic contact layer; at least one electrical contact on the first surface of the light emitting portion comprising an ohmic contact layer and patterned metallization suitable for at least one external electrical connection over at least one portion of the ohmic contact layer; first optically transmissive, dielectric layer with a refractive index less than the at least one semiconductor material and of a thickness greater than one-quarter wavelength of the predetermined wavelength divided by the index of refraction of the optically transmissive dielectric layer coupled to the optically transmissive, ohmic contact layer one or more second layers coupled to the first optically transmissive dielectric layer wherein each one or more second layers comprises a first dielectric layer of high-index of refraction and a second dielectric layer of low-index of refraction wherein the first dielectric layer is of a thickness about mλ
/4nH, and the second dielectric layer is of a thickness about kλ
/4nL, where m and k are odd integers, λ
is the predetermined nominal wavelength, nH is the refractive index of the high-index of refraction dielectric layer and nL is the refractive index of the low-index of refraction dielectric layer;a metallic layer coupled to the one or more second layers and in contact with the optically transmissive, dielectric layer and to the first optically transmissive, ohmic contact layer by more than one via through the one or more second layers, and the first optically transmissive dielectric layer;
wherein the reflectivity of the metallic layer to the predetermined wavelength is greater than 50 percent; anda means for mounting the device;
wherein the metallic layer is at least thermally coupled to the means for mounting. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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23. A method of improving light extraction efficiency of a device capable of emitting light about a predetermined wavelength in response to an applied electric current comprising the steps:
- coupling an optically transmissive, ohmic contact layer to a light emitting portion of the device;
coupling first surface of an optically transmissive, dielectric layer of a thickness greater than one-quarter wavelength of the predetermined wavelength divided by the index of refraction of the optically transmissive dielectric layer to the optically transmissive, ohmic contact layer; and coupling a first surface of one or more second layers to a second surface of the optically transmissive, dielectric layer wherein each one or more second layers comprises a first dielectric layer of high-index of refraction and a second dielectric layer of low-index of refraction wherein the first dielectric layer is of a thickness about mλ
/4nH, and the second dielectric layer is of a thickness about kλ
/4nL, where m and k are odd integers, λ
is the predetermined nominal wavelength in air, nH is the refractive index of the high-index of refraction dielectric layer and nL is the refractive index of the low-index of refraction dielectric layer; andcoupling a metallic layer to a second surface of the one or more second layers and in contact with the optically transmissive, dielectric layer and to the optically transmissive, ohmic contact layer by more than one via through the one or more second layers and the optically transmissive, dielectric layer;
wherein the reflectivity of the metallic layer to the predetermined wavelength is greater than 50 percent.
- coupling an optically transmissive, ohmic contact layer to a light emitting portion of the device;
Specification