Pressure sensors and methods of making the same

• US 7,622,782 B2
• Filed: 08/24/2005
• Issued: 11/24/2009
• Est. Priority Date: 08/24/2005
• Status: Expired due to Fees

• Current Assignee: Amphenol Thermometrics, Inc. (Amphenol Corporation)
• Original Assignee: General Electric Company
• Inventors: Chu, Stanley, Kwon, Hyon-Jin, Gamage, Sisira Kankanam
• Primary Examiner(s): Fahmy; Wael
• Assistant Examiner(s): ARMAND, MARC ANTHONY
• Application Number:
  US11/210,309
• Publication Number:
  US 20070052046A1
• Time in Patent Office: 1,553 Days
• Field of Search: 257/415, 257/467, 257/909, 257/470, 257/E27.006
• US Class Current: 257/415
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate
• CPC Class Codes: B81C 2203/036 Fusion bonding
• CPC Class Codes: B81C 3/001 Bonding of two components
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: Y10S 257/909 Macrocell arrays, e.g. gate arrays with variable size or configuration of cells
• CPC Class Codes: Y10S 438/909 Controlled atmosphere

Abstract

A pressure sensor includes a base substrate silicon fusion bonded to a cap substrate with a chamber disposed between the base substrate and the cap substrate. Each of the base substrate and the cap substrate include silicon. The base substrate includes walls defining a cavity and a diaphragm portion positioned over the cavity, wherein the cavity is open to an environment to be sensed. The chamber is hermetically sealed from the environment.

Claims

1. A pressure sensor comprising:

a base substrate comprising first and second support portions, facing surfaces of the first and second support portions comprising walls defining a first cavity, the base substrate further comprising a diaphragm portion extending between top portions of the first and second support portions, wherein the base substrate comprises silicon and wherein the first cavity is open to an environment to be sensed;

at least one bottom dielectric layer disposed on an underside of each support portion of the base substrate that do not extend past edges of the undersides of the support portions;

a cap substrate comprising silicon;

a silicon fusion bond between the cap substrate and the base substrate;

a chamber disposed between the base substrate and the cap substrate, wherein the chamber is hermetically sealed from the environment by the silicon fusion bond;

a piezo-resistive element disposed in physical communication with the diaphragm portion between the chamber and the first cavity; and

a conductive pathway implanted between the base substrate and the at least one top dielectric layer, the conductive pathway connected to and extending from the piezo-resistive element to a portion of the base substrate beyond an outer edge of the cap substrate.

2. The pressure sensor of claim 1, wherein the cap substrate comprises a thickness up to about 400 micrometers.

3. The pressure sensor of claim 1, wherein the chamber is defined by a cap cavity in the cap substrate.

4. The pressure sensor of claim 1, wherein the chamber is defined by a base cavity in the base substrate, wherein the diaphragm portion is disposed between the first cavity and the base cavity.

5. The pressure sensor of claim 1, wherein the chamber is defined by a cap cavity in the cap substrate and a base cavity in the base substrate, wherein the diaphragm portion is disposed between the first cavity and the base cavity.

6. The pressure sensor of claim 1, wherein each of the base substrate and the cap substrate are not silicon-on-insulator wafers.

7. The pressure sensor of claim 1, wherein the base substrate is an n-type substrate, and the piezo-resistive element comprises a p-type dopant material.

8. The pressure sensor of claim 1, further comprising an electrode connected to the conductive pathway, wherein the electrode is in electrical communication with the piezo-resistive element via the conductive pathway, wherein the base substrate is an n-type substrate, wherein each of the conductive pathway and the piezo-resistive element comprise a p-type dopant material.

9. The pressure sensor of claim 1, further comprising an oxide layer covering at least a portion of the diaphragm portion that is in physical communication with the piezo-resistive element, and a nitride layer disposed over the oxide layer.

10. The pressure sensor of claim 1, wherein the conductive pathway sandwiched between the cap substrate and the base substrate, the conductive pathway is shielded from the environment;

and the piezo-resistive element is in electrical communication with the conductive pathway.

11. The pressure sensor of claim 2, wherein the thickness is about 50 micrometers to about 150 micrometers.

12. A pressure sensor comprising:

a base substrate comprising first and second support portions, a first pair of facing surfaces of the first and second support portions comprising walls defining a lower cavity, a second pair of facing surfaces of the first and second support portions comprising walls defining an upper cavity, the base substrate further comprising a diaphragm portion extending between the first and second support portions and disposed between the lower and upper cavities, wherein upper portions of the first and second support portions define a support surface, wherein the base substrate comprises silicon, and wherein the lower cavity is open to an environment to be sensed;

a cap substrate comprising silicon, wherein the cap substrate comprises a planar bottom surface that defines a support surface of the cap substrate and an upper surface of the upper cavity, wherein the support surface of the cap substrate is disposed over the support surface of the upper portions of the first and second support portions, wherein the cap substrate is silicon fusion bonded to the base substrate such that the upper cavity forms a chamber between the base substrate and the cap substrate, wherein the chamber is hermetically sealed from the environment; and

a piezo-resistive element disposed in physical communication with the diaphragm portion.

13. The pressure sensor of claim 12, wherein the cap substrate comprises a thickness up to about 400 micrometers.

14. The pressure sensor of claim 12, wherein the thickness is about 50 micrometers to about 150 micrometers.

15. The pressure sensor of claim 12, wherein the chamber is defined by a base cavity in the base substrate, wherein the diaphragm portion is disposed between the cavity and the base cavity.

16. The pressure sensor of claim 12, wherein the base substrate is an n-type substrate, and the piezo-resistive element comprises a p-type dopant material.

17. The pressure sensor of claim 12, further comprising an electrode and a conductive pathway, wherein the electrode is in electrical communication with the piezo-resistive element via the conductive pathway, wherein the base substrate is an n-type substrate, and wherein each of the conductive pathway and the piezo-resistive element comprise a p-type dopant material.

18. The pressure sensor of claim 12, further comprising an oxide layer covering at least a portion of the diaphragm portion that is in physical communication with the piezo-resistive element, and a nitride layer disposed over the oxide layer.

19. The pressure sensor of claim 12, further comprising a conductive pathway sandwiched between the cap substrate and the base substrate, wherein the conductive pathway is shielded from the environment;

and the piezo-resistive element is in electrical communication with the conductive pathway.