Display device and sputtering target for producing the same
First Claim
1. A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film,wherein the Al alloy film comprises 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Cu and Ge, and 0.1 to 2 at % of at least one element selected from the group consisting of Rh, Ir, La, Ce, Pr, Gd, Tb, Eu, Ho, Er, Tm, Yb, Lu and Dy as alloy components, andwherein the components selected from the group consisting of Ni, Cu and Ge concentrate at the interface of contact in a layer of thickness of from 1 to 5 nm.
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Accused Products
Abstract
A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film contains 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu and Ge, and further contains 1) 0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy or 2) 0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W, as the alloy components.
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Citations
12 Claims
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1. A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film,
wherein the Al alloy film comprises 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Cu and Ge, and 0.1 to 2 at % of at least one element selected from the group consisting of Rh, Ir, La, Ce, Pr, Gd, Tb, Eu, Ho, Er, Tm, Yb, Lu and Dy as alloy components, and wherein the components selected from the group consisting of Ni, Cu and Ge concentrate at the interface of contact in a layer of thickness of from 1 to 5 nm.
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2. A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film,
wherein the Al alloy film comprises 0.1 to 6 at % of at least one element selected from the group containing of Ni, Cu and Ge, and 0.1 to 1 at % of V, as alloy components, and wherein the components selected from the group consisting of Ni, Cu and Ge concentrate at the interface of contact in a layer of thickness of from 1 to 5 nm.
Specification
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- Resources
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Current AssigneeKabushiki Kaisha Kobe Seiko Sho (Kobe Steel Limited)
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Original AssigneeKobe Steel Limited
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InventorsKugimiya, Toshihiro, Gotoh, Hiroshi, Tomihisa, Katsufumi
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Primary Examiner(s)CLARK, SHEILA V
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Application NumberUS11/349,520Publication NumberTime in Patent Office1,385 DaysField of Search257/771, 257/765, 257/750US Class Current257/765CPC Class CodesG02F 1/136295 Materials; Compositions; Ma...H01L 2224/73204 the bump connector being em...H01L 27/12 the substrate being other t...H01L 27/124 with a particular compositi...H01L 29/458 for thin film silicon, e.g....H01L 29/4908 for thin film semiconductor...
