Electromagnetic-wave oscillator

• US 7,622,999 B2
• Filed: 05/21/2007
• Issued: 11/24/2009
• Est. Priority Date: 05/31/2006
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Ouchi, Toshihiko, Koyama, Yasushi, Itsuji, Takeaki
• Primary Examiner(s): Pascal; Robert
• Assistant Examiner(s): Gannon; Levi
• Application Number:
  US11/751,517
• Publication Number:
  US 20070279136A1
• Time in Patent Office: 918 Days
• Field of Search: 331/107.T, 331/107.SL, 331/108.C, 331/108.D, 331/185, 257/506, 343/700.MS
• US Class Current: 331/107.00T
• CPC Class Codes: H03B 5/1847 the active element in the amplifier being a semiconductor device
• CPC Class Codes: H03B 7/08 being a tunnel diode

Abstract

An electromagnetic-wave oscillator includes a substrate, an EMW oscillating unit including a gain portion, an EMW resonance portion, an EMW radiating portion, and a ground (GND) portion, and a supplying unit for supplying electric power to the EMW oscillating unit. The ground portion regulates a predetermined reference electric potential for the gain portion, the EMW resonance portion, and the EMW radiating portion. The EMW oscillating unit is disposed on a first surface of the substrate. The supplying unit is disposed on a second surface of the substrate extending on an opposite side to the first surface. The EMW oscillating unit and the supplying unit are electrically connected via a penetrating electrode formed in the substrate.

Claims

1. An oscillator for emitting terahertz waves, the oscillator comprising:

a substrate, the substrate having a first surface, and a second surface extending on a side opposite to a side on which the first surface extends;

a layer including a gain portion;

a first electrode and a second electrode which are electrically connected to the gain portion;

an oscillation unit disposed on the first surface of the substrate and formed by sandwiching the layer between the first electrode and the second electrode;

a third electrode disposed on the second surface of the substrate; and

a first penetrating electrode penetrating the inside of the substrate and connecting the first electrode and the third electrode such that a direct current is supplied,

wherein the oscillation unit radiates terahertz waves generated by supplying electric power from the third electrode to the gain portion through the first penetrating electrode and the first electrode.

2. The oscillator according to claim 1, wherein the first penetrating electrode is disposed at a node of a standing wave of an electromagnetic field resonating in the electromagnetic-wave oscillating unit.

3. The oscillator according to claim 1, wherein the gain portion comprises a negative resistance element.

4. The oscillator according to claim 3, wherein the negative resistance element comprises a resonance tunnel diode.

5. The oscillator according to claim 1, wherein a plurality of the oscillators are arranged in an array.

6. The oscillator according to claim 1, wherein the oscillation unit is disposed on the first surface by bringing the first electrode or the second electrode into contact with the first surface.

7. The oscillator according to claim 1, further comprising:

a fourth electrode disposed on the second surface; and

a second penetrating electrode penetrating the inside of the substrate and connecting the second electrode and the fourth electrode such that a direct current is supplied.

8. The oscillator according to claim 7, wherein a reference electric potential for the gain portion is regulated by grounding the fourth electrode.

9. The oscillator according to claim 1, wherein the oscillation unit includes a radiating portion electrically connected to the gain portion and is formed such that the terahertz waves are radiated from the radiating portion.