Reducing program disturb in non-volatile storage using early source-side boosting
First Claim
1. A method for operating non-volatile storage, comprising:
- boosting a first region of a substrate starting at a first time, a set of non-volatile storage elements is formed, at least in part, on the substrate, the set of non-volatile storage elements is associated with a set of word lines and includes at least one non-volatile storage element associated with a selected word line of the set of word lines;
applying an isolation voltage to at least one isolation word line in the set of word lines on a source side of the selected word line, the first region extends under a plurality of word lines on a source side of the isolation word line in the substrate;
boosting a second region of the substrate on a drain side of the isolation word line, the boosting of the second region starts at a second time which is after the first time, the second region extends under a plurality of word lines, including the selected word line, on the drain side of the isolation word line in the substrate; and
applying a program voltage to the selected word line, the program voltage is applied starting at a third time which is after the second time, and ending at a fourth time which is after the third time, where the first region is boosted between at least the first and third times and the second region is boosted between at least the second and third times, but not between the first and second times, and the isolation voltage is applied at least between the first and fourth times.
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Abstract
Program disturb is reduced in non-volatile storage by boosting unselected NAND strings in an array so that a source side channel, on a source side of a selected word line, is boosted before a drain side channel, on a drain side of the selected word line. In one approach, a first boost mode is used when the selected word line is a lower or intermediate word line. In the first boost mode, boosting of the source and drain side channels is initiated concurrently. A second boost mode is used when the selected word line is a higher word line. In the second boost mode, boosting of the source side channel occurs early relative to the boosting of the drain side channel. Either boost mode include an isolation voltage which tends to isolate the source and drain side channels from one another.
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Citations
22 Claims
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1. A method for operating non-volatile storage, comprising:
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boosting a first region of a substrate starting at a first time, a set of non-volatile storage elements is formed, at least in part, on the substrate, the set of non-volatile storage elements is associated with a set of word lines and includes at least one non-volatile storage element associated with a selected word line of the set of word lines; applying an isolation voltage to at least one isolation word line in the set of word lines on a source side of the selected word line, the first region extends under a plurality of word lines on a source side of the isolation word line in the substrate; boosting a second region of the substrate on a drain side of the isolation word line, the boosting of the second region starts at a second time which is after the first time, the second region extends under a plurality of word lines, including the selected word line, on the drain side of the isolation word line in the substrate; and applying a program voltage to the selected word line, the program voltage is applied starting at a third time which is after the second time, and ending at a fourth time which is after the third time, where the first region is boosted between at least the first and third times and the second region is boosted between at least the second and third times, but not between the first and second times, and the isolation voltage is applied at least between the first and fourth times. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for operating non-volatile storage, comprising:
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applying pass voltages to first and second groups of non-volatile storage elements in a set of non-volatile storage elements, the first group comprising a plurality of series-connected programmed non-volatile storage elements and the second group comprising a plurality of series-connected unprogrammed non-volatile storage elements; and applying a programming voltage to at least one non-volatile storage element in the set of non-volatile storage elements which is between the first and second groups, the applying pass voltages and the applying the programming voltage occur in a cycle of boosting and programming of a programming operation which comprises multiple cycles of boosting and programming, where the pass voltages are applied prior to the applying the programming voltage, the pass voltages are applied to the first group prior to being applied to the second group, and an isolation voltage is applied to at least one isolation non-volatile storage element in the set of non-volatile storage elements between the first and second groups. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method for operating non-volatile storage, comprising:
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performing a cycle of boosting and programming of a programming operation which includes multiple cycles of boosting and programming, the programming operation involves nonvolatile storage elements in a set of non-volatile storage elements, the set of non-volatile storage elements is formed, at least in part, on a substrate, the set of non-volatile storage elements is associated with a set of word lines; the performing the cycle of boosting and programming includes applying an isolation voltage to an isolation word line in the set of word lines, applying a programming voltage on a selected word line of the set of word lines, and prior to applying the programming voltage, initiating boosting of a first region of the substrate on a source side of the isolation word line and initiating boosting of a second region of the substrate on a drain side of the isolation word line; and determining when to implement a delay of the initiating boosting of the second region relative to the initiating boosting of the first region in the cycle of boosting and programming based on a position of the selected word line in the set of word lines. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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Specification