×

Method for producing masks for photolithography and the use of such masks

  • US 7,625,675 B2
  • Filed: 02/22/2005
  • Issued: 12/01/2009
  • Est. Priority Date: 02/25/2004
  • Status: Expired due to Fees
First Claim
Patent Images

1. Mask for photolithography method comprising opaque and transparent areas and a surface structure, characterized in that for the purpose of establishing a contact to a substrate (10) that is supposed to be exposed, at least a few opaque areas are designed as areas resting positively on said substrate and at least a few transparent areas within a portion of the mask facing entirely to said substrate are arranged spaced and deep-etched down to a structural depth, and at least one transparent area is designed as a positively resting area for resting on said substrate, wherein the structural depth in the deep-etched areas is greater than the thickness of the surface structure.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×