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Methods of making spintronic devices with constrained spintronic dopant

  • US 7,625,767 B2
  • Filed: 03/16/2007
  • Issued: 12/01/2009
  • Est. Priority Date: 03/17/2006
  • Status: Active Grant
First Claim
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1. A method for making a spintronic device comprising:

  • forming at least one superlattice; and

    forming at least one electrical contact coupled to the at least one superlattice;

    the at least one superlattice comprising a plurality of groups of layers with each group of layers comprisinga plurality of stacked base semiconductor monolayers defining a base semiconductor portion having a crystal lattice,at least one non-semiconductor monolayer constrained within the crystal lattice of adjacent base semiconductor portions, andat least one spintronic dopant monolayer adjacent the at least one non-semiconductor monolayer and constrained within the crystal lattice of the base semiconductor portion by the at least one non-semiconductor monolayer.

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