Method of patterning mechanical layer for MEMS structures
First Claim
1. A method of making a microelectromechanical system (MEMS) device, the method comprising:
- forming a stationary layer over a substrate;
forming a sacrificial layer over the stationary layer, the sacrificial layer being formed of a first material;
forming a mechanical layer over the sacrificial layer; and
forming a mask layer over the mechanical layer, the mask layer being formed of a second material, wherein the first and second materials are etchable by a single etchant which is substantially selective for etching the first and second materials relative to the mechanical layer.
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Abstract
A method of making a microelectromechanical system (MEMS) device is disclosed. The method includes forming a stationary layer over a substrate. A sacrificial layer is formed over the stationary layer. The sacrificial layer is formed of a first material. A mechanical layer is formed over the sacrificial layer. A hard mask layer is formed over the mechanical layer. The hard mask layer is formed of a second material. The first and second materials are etchable by a single etchant which is substantially selective for etching the first and second materials relative to the mechanical layer. The hard mask layer is patterned after forming the hard mask layer. Subsequently, the mechanical layer is etched through the patterned hard mask layer. The patterned hard mask layer is removed simultaneously with the sacrificial layer after etching the mechanical layer.
203 Citations
45 Claims
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1. A method of making a microelectromechanical system (MEMS) device, the method comprising:
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forming a stationary layer over a substrate; forming a sacrificial layer over the stationary layer, the sacrificial layer being formed of a first material; forming a mechanical layer over the sacrificial layer; and forming a mask layer over the mechanical layer, the mask layer being formed of a second material, wherein the first and second materials are etchable by a single etchant which is substantially selective for etching the first and second materials relative to the mechanical layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. An optical microelectromechanical system (MEMS) device comprising:
an array of interferometric modulators, each interferometric modulator comprising; a stationary layer; and a movable mirror overlying the stationary layer with a cavity therebetween, the movable mirror being movable in the cavity between a first position and a second position, the first position being a first distance from the stationary layer, the second position being a second distance from the stationary layer, the second distance being greater than the first distance, the movable mirror comprising a reflective layer and a mechanical layer overlying the reflective layer, the mechanical layer being formed of nickel or a nickel alloy, the mechanical layer having an area of less than about 62,500 μ
m2,wherein the mechanical layer has a maximum line edge roughness of less than about 0.8 μ
m,wherein the reflective layer is suspended from the mechanical layer, and is substantially free of etch damage. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
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42. A microelectromechanical system (MEMS) device, the device comprising:
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first electrode means for conducting a first electrical signal; second electrode means for conducting a second electrical signal; means for supporting the first and second electrode means; means for providing a gap between the first electrode means and the second electrode means; and means for patterning the second electrode means with a low edge roughness, the means for patterning being removable without damage to the first and second electrode means. - View Dependent Claims (43, 44, 45)
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Specification