Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide in the form of ZnxIn2yOx+3y;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel.
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Abstract
A semiconductor device can include a channel including a zinc-indium oxide film.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide in the form of ZnxIn2yOx+3y; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide formed using any of ZnO, ZnxIn2yOx+3y, In2O3, and mixtures thereof; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (8, 9, 10, 11)
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12. A display device, comprising:
a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including; a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide in the form of ZnxIn2yOx+3y; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel. - View Dependent Claims (13, 14, 15)
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16. A display device comprising:
a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including; a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide formed using any of ZnO, ZnxIn2yOx+3y, In2O3, and mixtures thereof; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel. - View Dependent Claims (17, 18, 19, 20)
Specification