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NAND-type non-volatile memory devices having a stacked structure

  • US 7,626,228 B2
  • Filed: 12/12/2006
  • Issued: 12/01/2009
  • Est. Priority Date: 12/12/2005
  • Status: Expired due to Fees
First Claim
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1. A NAND-type nonvolatile memory device, comprising:

  • a semiconductor substrate;

    a first ground selection line and a first string selection line disposed on the substrate in parallel to each other;

    a plurality of parallel first word lines interposed on the substrate between the first ground selection line and the first string selection line;

    a first impurity-doped region formed in the semiconductor substrate adjacent to the first word lines, the first ground selection line, and the first string selection line;

    a first interlayer dielectric layer disposed on the first ground selection line, the first string selection line, the plurality of first word lines, and the semiconductor substrate;

    an epitaxial contact plug that contacts the semiconductor substrate through the first interlayer dielectric layer;

    a single crystalline semiconductor layer disposed on the first interlayer dielectric layer that contacts the epitaxial contact plug;

    a plurality of parallel second word lines disposed on the single crystalline semiconductor layer;

    a second impurity-doped region formed in the single crystalline semiconductor layer adjacent to the second word lines; and

    a second interlayer dielectric layer disposed on the plurality of second word lines and the single crystalline semiconductor layer;

    wherein the epitaxial contact plug comprises a first epitaxial contact plug that is located between the plurality of first word lines and the first ground selection line and a second epitaxial contact plug that is located between the plurality of first word lines and the first string selection line, the first epitaxial contact plug electrically connecting the first impurity-doped region between the plurality of first word lines and the first ground selection line to the second impurity-doped region on a first side of the second word lines and the second epitaxial contact plug electrically connecting the first impurity-doped region between the plurality of first word lines and the first string selection line to the second impurity-doped region on a second side of the second word lines.

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