Model-based pattern characterization to generate rules for rule-model-based hybrid optical proximity correction
First Claim
1. A method to analyze a layout pattern comprising one or more features to determine whether at least one shape of the pattern is suitable for rule-based optical proximity correction, comprising the steps of:
- analyzing the pattern to identify a plurality of variable values comprising width (w), spacing (s), and height (h);
calculating a region of sight based on the variable values, the region of sight being given by h(w+s);
specifying at least one performance metric specification for the at least one shape of the pattern for which a suitable correction rule is sought;
calculating a range of possible values for the at least one performance metric induced by uncertainties outside the region of sight by simulating the pattern using a lithography model, wherein said simulation is performed by an integrated circuit (IC) design tool; and
determining whether the at least one shape can be corrected by rule-based optical proximity correction dependent on whether there exists at least one correction rule to the at least one shape such that when the correction rule is applied, the range of possible values of the at least one performance metric is within the at least one performance metric specification.
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Abstract
A system and method are provided for analyzing layout patterns via simulation using a lithography model to characterize the patterns and generate rules to be used in rule-based optical proximity correction (OPC). The system and method analyze a series of layout patterns conforming to a set of design rules by simulation using a lithography model to obtain a partition of the pattern spaces into one portion that requires only rule-based OPC and another portion that requires model-based OPC. A corresponding hybrid OPC system and method are also introduced that utilize the generated rules to correct an integrated circuit (IC) design layout which reduces the OPC output complexity and improves turnaround time.
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Citations
40 Claims
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1. A method to analyze a layout pattern comprising one or more features to determine whether at least one shape of the pattern is suitable for rule-based optical proximity correction, comprising the steps of:
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analyzing the pattern to identify a plurality of variable values comprising width (w), spacing (s), and height (h); calculating a region of sight based on the variable values, the region of sight being given by h(w+s); specifying at least one performance metric specification for the at least one shape of the pattern for which a suitable correction rule is sought; calculating a range of possible values for the at least one performance metric induced by uncertainties outside the region of sight by simulating the pattern using a lithography model, wherein said simulation is performed by an integrated circuit (IC) design tool; and determining whether the at least one shape can be corrected by rule-based optical proximity correction dependent on whether there exists at least one correction rule to the at least one shape such that when the correction rule is applied, the range of possible values of the at least one performance metric is within the at least one performance metric specification. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method to analyze a pattern comprising one or more features by simulating with a lithography model to determine whether a shape of the pattern is suitable for correction by a given rule, comprising the steps of:
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analyzing the pattern to identify a plurality of variable values comprising width (w), spacing (s), and height (h); calculating a region of sight based on the variable values, the region of sight being given by h (w+s); specifying at least one performance metric specification; applying the given rule to correct the shape; calculating a range of possible values for the at least one performance metric induced by one or more uncertainties outside the region of sight by simulating the pattern including the corrected shape using the lithography model, wherein said simulation is performed by an integrated circuit (IC) design tool; and determining whether the range of possible values of the at least one performance metric is within the at least one performance metric specification when the given rule is applied. - View Dependent Claims (18, 19, 20)
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21. A system having computer instructions embodied on or in a computer-readable medium and executable by a processor for analyzing a layout pattern comprising one or more features to determine whether at least one shape of the pattern is suitable for rule-based optical proximity correction, the instructions comprising:
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instructions for analyzing the pattern to identify a plurality of variable values comprising width (w), spacing (s), and height (h); instructions for calculating a region of sight based on the variable values, the region of sight being given by h(w+s); instructions for specifying at least one performance metric specification for the at least one shape of the pattern for which a suitable correction rule is sought based on at least one correction rule; instructions for calculating a range of possible values for the at least one performance metric induced by uncertainties outside the region of sight by simulating the pattern using a lithography model; and instructions for determining whether the at least one shape can be corrected by rule-based optical proximity correction dependent on whether there exists at least one correction rule to the at least one shape such that when the correction rule is applied, the range of possible values of the at least one performance metric is within the at least one performance metric specification. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A system having computer instructions embodied on or in a computer-readable medium and executable by a processor for analyzing a pattern comprising one or more features by simulating with a lithography model to determine whether a shape of the pattern is suitable for correction by a given rule, the instructions comprising:
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instructions for analyzing the pattern to identify a plurality of variable values comprising width (w), spacing (s), and height (h); instructions for calculating a region of sight based on the variable values, the region of sight being given by h(w+s); instructions for specifying at least one performance metric specification; instructions for applying the given rule to correct the shape; instructions for calculating a range of possible values for the at least one performance metric induced by one or more uncertainties outside the region of sight by simulating the pattern including the corrected shape using the lithography model; and instructions for determining whether the range of possible values of the at least one performance metric is within the at least one performance metric specification when the given rule is applied. - View Dependent Claims (38, 39, 40)
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Specification