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Reactive ion etching for semiconductor device feature topography modification

  • US 7,628,897 B2
  • Filed: 09/12/2003
  • Issued: 12/08/2009
  • Est. Priority Date: 10/23/2002
  • Status: Expired due to Fees
First Claim
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1. A method for depositing a film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising:

  • depositing a first portion of the film over the substrate from a first gaseous mixture flowed into the processing chamber by chemical-vapor deposition;

    thereafter, etching the first portion by flowing an etchant gas comprising a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber, with halogen precursor being flowed into the processing chamber at a flow rate between 10 and 1000 sccm and the hydrogen precursor being flowed into the processing chamber at a flow rate between 50 sccm and 500 sccm to control chemical interaction between the halogen precursor and the hydrogen precursor to provide a desired etch rate; and

    thereafter, depositing a second portion of the silicate glass film over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.

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