Reactive ion etching for semiconductor device feature topography modification
First Claim
1. A method for depositing a film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising:
- depositing a first portion of the film over the substrate from a first gaseous mixture flowed into the processing chamber by chemical-vapor deposition;
thereafter, etching the first portion by flowing an etchant gas comprising a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber, with halogen precursor being flowed into the processing chamber at a flow rate between 10 and 1000 sccm and the hydrogen precursor being flowed into the processing chamber at a flow rate between 50 sccm and 500 sccm to control chemical interaction between the halogen precursor and the hydrogen precursor to provide a desired etch rate; and
thereafter, depositing a second portion of the silicate glass film over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.
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Accused Products
Abstract
A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.
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Citations
28 Claims
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1. A method for depositing a film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising:
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depositing a first portion of the film over the substrate from a first gaseous mixture flowed into the processing chamber by chemical-vapor deposition; thereafter, etching the first portion by flowing an etchant gas comprising a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber, with halogen precursor being flowed into the processing chamber at a flow rate between 10 and 1000 sccm and the hydrogen precursor being flowed into the processing chamber at a flow rate between 50 sccm and 500 sccm to control chemical interaction between the halogen precursor and the hydrogen precursor to provide a desired etch rate; and thereafter, depositing a second portion of the silicate glass film over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for depositing a silicate glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising:
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depositing a first portion of the silicate glass film over the substrate by forming a plasma from a first gaseous mixture flowed into the processing chamber, the first gaseous mixture comprising a silicon-containing gas and an oxygen-containing gas; thereafter, etching the first portion by forming a plasma from an etchant gas mixture flowed into the processing chamber, the etchant gas mixture comprising a fluorine-containing gas, H2, and O2, wherein the fluorine-containing gas is flowed into the processing chamber at a flow rate between 10 and 1000 sccm and the H2 is flowed into the processing chamber at a flow rate between 50 sccm and 500 sccm; and thereafter, depositing a second portion of the silicate glass film over the substrate by forming a plasma from a second gaseous mixture flowed into the processing chamber, the second gaseous mixture comprising the silicon-containing gas and the oxygen-containing gas. - View Dependent Claims (21, 22, 23, 24, 25)
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26. A method for depositing a silicate glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising:
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depositing a first portion of the film over the substrate by forming a plasma from a first gaseous mixture flowed into the processing chamber; thereafter, etching the first portion by forming a plasma from an etchant gas mixture flowed into the processing chamber, the etchant gas mixture comprising a first precursor gas reactive with the film, a second precursor gas reactive with the first precursor gas, and an inert sputtering agent flowed into the processing chamber, with the first precursor gas being flowed into the processing chamber at a flow rate between 10 and 1000 sccm and second precursor gas being flowed at a flow rate between 50 sccm and 500 sccm to control chemical interaction between the first and second precursor gases to provide a desired etch rate, and with the inert sputtering agent flowed at a respective flow rate to control relative isotropic and anisotropic contributions to the etching; and thereafter, depositing a second portion of the silicate glass film by forming a plasma from a second gaseous mixture. - View Dependent Claims (27, 28)
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Specification