RFID temperature sensing wafer, system and method

• US 7,629,184 B2
• Filed: 03/20/2007
• Issued: 12/08/2009
• Est. Priority Date: 03/20/2007
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Kulp, John M.
• Primary Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US11/688,421
• Publication Number:
  US 20080230866A1
• Time in Patent Office: 994 Days
• Field of Search: 438 14- 17, 438/530, 438/584, 438/763, 257/E21.051, 257/53, 257/91, 257/324, 257/632
• US Class Current: 438/14
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 21/68714 the wafers being placed on a susceptor, stage or support

Abstract

A method of manufacturing semiconductor wafers is provided that comprises processing a semiconductor wafer to form at least one temperature-sensing RF device on the wafer and further processing the wafer to form a plurality of semiconductor products on the wafer while sensing temperature on the wafer with the formed RF device and wirelessly transmitting data from the RF device. Semiconductor wafers made according to the method are provided having at least one active RFID temperature-sensing device and semiconductor device products formed thereon. The RFID devices are located on portions of the wafer that are disposable when the semiconductor device products are cut from the wafers. A semiconductor wafer processing apparatus is provided having an RF antenna and transmitter and receiver circuits that communicate with RF devices on a wafer during processing.

Claims

1. A method of manufacturing semiconductor wafers comprising:

processing a semiconductor wafer to form at least one temperature-sensing RF device on the wafer;

further processing the wafer to form a plurality of semiconductor products on the wafer; and

during the further processing of the wafer, sensing temperature at locations on the wafer corresponding to each of the at least one RF device and wirelessly transmitting data, including temperature data, from the at least one RF device.

2. The method of claim 1 wherein:

the processing of a semiconductor wafer includes forming a plurality of temperature-sensing RFID devices, each RFID device capable of transmitting a unique device-identifying code and temperature data.

3. The method of claim 2 further comprising:

interrogating the plurality of temperature-sensing RFID devices on the wafer with an RFID communications system; and

receiving a transmitted device-identifying code and transmitted temperature data from the plurality of temperature-sensing RFID devices.

4. The method of claim 3 further comprising:

interpreting a received device-identifying code from the RFID device to correlate the received temperature data with a location on the wafer.

5. The method of claim 4 further comprising:

interpreting received temperature data from the plurality of temperature-sensing RFID devices and controlling the temperature of the wafer at different locations thereon in response to the received data.

6. The method of claim 1 further comprising:

interrogating the RF device on the wafer with an RF communications system; and

receiving transmitted temperature data from the RF device.

7. The method of claim 6 further comprising:

interpreting received data from the RF devices and monitoring a process thereby.

8. The method of claim 6 further comprising:

interpreting received data from the RF devices and controlling a process thereby.

9. The method of claim 6 further comprising:

interpreting received data from the RF devices and controlling the temperature of the wafer at the location in response to the received data.

10. A semiconductor wafer made according to the method of claim 1 having at least one active RFID temperature-sensing device formed thereon.

11. The wafer of claim 10 wherein the wafer is a product wafer and further comprises:

semiconductor device products formed thereon.

12. The wafer of claim 11 wherein:

the semiconductor device products and the active RFID devices include components formed of same layers on the wafer.

13. The wafer of claim 11 wherein:

the RFID devices are marketable high quality RFID temperature sensing temperature-sensing chips.

14. The wafer of claim 11 wherein:

the RFID devices are located on portions of the wafer that are disposable when the semiconductor device products are cut from the wafers.

15. The wafer of claim 10 wherein the RFID temperature sensing temperature-sensing device comprises:

an antenna for receiving an RFID interrogating signal and transmitting RF data;

a temperature sensor for generating wafer temperature data;

one or more memory devices containing ID data identifying the device and for storing wafer temperature information from the temperature sensor;

logic circuitry for storing wafer temperature information in the one or more memory devices in response to wafer temperature data generated by the temperature sensor;

an RFID circuit for transmitting the ID data and data of the wafer temperature information in response to an RFID interrogating signal received by the antenna; and

a power circuit for providing electrical energy for powering the RFID temperature-sensing device from ambient energy.

16. The wafer of claim 15 wherein:

the power circuit is operative to power the RFID temperature-sensing device from energy from a received RFID interrogating signal.

17. The wafer of claim 15 wherein:

the power circuit is operative to power the RFID temperature-sensing device from energy within the chamber other than that from a received RFID interrogating signal.

18. A semiconductor wafer processing apparatus having a processor programmed to operate the apparatus to manufacture semiconductor wafers according to the method of claim 1, the apparatus further comprising:

a processing chamber;

a wafer support in the processing chamber; and

an RF system having an RF antenna coupled to the chamber, transmitter and receiver circuits connected to the antenna and an RF generator connected to the transmitter and receiver circuits, and being configured to communicate with an RF temperature-sensor device on a wafer that is supported on the wafer support during the processing of a wafer.

19. The apparatus of claim 18 wherein:

the processor is connected to the receiver circuit and programmed to interpret a signal received by the antenna from the RF temperature sensor to derive wafer temperature information therefrom.

20. The apparatus of claim 19 wherein:

the processor is programmed to interpret the signal received by the antenna from the RF temperature sensor to derive the identity of the temperature sensor therefrom and to correlate the wafer temperature information with the identity of the sensor.

21. The apparatus of claim 19 further comprising:

a controller operative to monitor the processing of the wafer in response to the wafer temperature information.

22. The apparatus of claim 19 further comprising:

a controller operative to control the temperature of the wafer in response to the wafer temperature information.

23. The apparatus of claim 19 further comprising:

a controller operative to control the processing of the wafer in response to the wafer temperature information.