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Semiconductor device

  • US 7,629,191 B2
  • Filed: 09/26/2006
  • Issued: 12/08/2009
  • Est. Priority Date: 03/12/2004
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, comprising:

  • providing a drain electrode;

    providing a source electrode;

    depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having a single-phase crystalline state of ZnxIn2yOx+3y, wherein x and y are each independently in the range of about 1 to about 15;

    providing a gate electrode; and

    providing a gate dielectric positioned between the gate electrode and the channel.

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