Diffusion barrier layer for MEMS devices

• US 7,630,114 B2
• Filed: 10/28/2005
• Issued: 12/08/2009
• Est. Priority Date: 10/28/2005
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: IDC, LLC
• Inventors: Zee, Stephen, Tung, Ming-Hau, Wang, Hsin-Fu
• Primary Examiner(s): Sugarman; Scott J
• Assistant Examiner(s): Tra; Tuyen Q
• Application Number:
  US11/261,236
• Publication Number:
  US 20070096300A1
• Time in Patent Office: 1,502 Days
• Field of Search: 359/237, 359/223, 359/224, 359/290, 359/291, 359/292, 359/295, 359/298
• US Class Current: 359/237
• CPC Class Codes: B81B 2201/047 Optical MEMS not provided for in B81B2201/042 - B81B2201/045
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: B81C 1/00793 Avoid contamination, e.g. absorption of impurities or oxidation
• CPC Class Codes: B81C 2201/0167 by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.

Claims

1. A MEMS device, comprising a deformable mechanical membrane supported by a plurality of posts, wherein the membrane includes:

a first deformable metallic layer;

a second deformable metallic layer; and

a diffusion barrier layer positioned between the first metallic layer and the second metallic layer, wherein;

the diffusion barrier layer is adapted to substantially inhibit any portion of the first metallic layer from mixing with any portion of the second metallic layer, and

the diffusion barrier layer comprises an oxide, a nitride, a carbide, alumino silicate, TiB₂, titanium, tungsten, titanium-tungsten alloy, silicon, or tantalum.

2. The device of claim 1, wherein the first metallic layer comprises aluminum.

3. The device of claim 1, wherein the second metallic layer comprises chromium.

4. The device of claim 1, wherein the second metallic layer comprises one or more metal(s) selected from the group consisting of titanium, copper, iron, silicon, manganese, magnesium, lithium, silver, gold, nickel, tantalum, and tungsten.

5. The device of claim 1, wherein the diffusion barrier layer comprises an oxide, nitride, or carbide.

6. The device of claim 1, wherein the diffusion barrier layer comprises silicon dioxide.

7. The device of claim 1, wherein the diffusion barrier layer comprises one or more compounds selected from the group consisting of an aluminum oxide, Si₃N₄, titanium nitride, tantalum nitride, silicon carbide, and titanium carbide.

8. The device of claim 1, wherein the MEMS device is an interferometric modulator and the first metallic layer acts as a mirror in the mechanical membrane.

9. The device of claim 1, wherein the diffusion barrier layer is adapted to also act as an etch stop by being resistant to an etchant capable of etching the second metallic layer.

10. The device of claim 1, wherein the diffusion barrier layer has a thickness of at least about 15 angstroms.

11. The device of claim 1, wherein the thickness of the first metallic layer is between about 200 angstroms and about 2000 angstroms.

12. The device of claim 1, wherein the thickness of the second metallic layer is between about 80 angstroms and about 1000 angstroms.

13. The device of claim 1, wherein the thickness of the first metallic layer is between about 800 angstroms and about 1200 angstroms, the thickness of the second metallic layer is between about 100 angstroms and about 500 angstroms, and the thickness of the diffusion barrier layer is between about 20 angstroms and about 60 angstroms.

14. The device of claim 13, wherein the first metallic layer is aluminum, the second metallic layer is chromium, and the diffusion barrier layer is silicon dioxide.

15. The device of claim 1, wherein the diffusion barrier layer is directly contacting the first metallic layer and the second metallic layer.

16. The MEMS device of claim 1, wherein the diffusion barrier layer comprises aluminum oxide, Si₃N₄, titanium nitride, tantalum nitride, silicon carbide, titanium carbide, alumino silicate, or TiB₂.

17. An interferometric modulator, comprising a deformable reflective layer supported by a plurality of posts that includes:

a deformable mirror;

a deformable mechanical layer adjacent to the deformable mirror, the mechanical layer adapted to provide mechanical support for the mirror; and

a diffusion barrier layer between the mirror and the mechanical layer, wherein;

the diffusion barrier layer is adapted to substantially inhibit any portion of the first metallic layer from mixing with any portion of the second metallic layer, and

the diffusion barrier layer comprises an oxide, a nitride, a carbide, alumino silicate, TiB₂, titanium, tungsten, titanium-tungsten alloy, silicon, or tantalum.

18. The interferometric modulator of claim 17, wherein the mirror comprises aluminum.

19. The interferometric modulator of claim 17, wherein the diffusion barrier comprises an oxide, nitride, or carbide.

20. The interferometric modulator of claim 17, wherein the diffusion barrier comprises silicon dioxide.

21. The interferometric modulator of claim 17, wherein the mechanical layer comprises chromium.

22. The interferometric modulator of claim 17, further comprising:

a display;

a processor that is configured to communicate with said display, said processor being configured to process an image data; and

a memory device that is configured to communicate with said processor.

23. The apparatus of claim 22, further comprising a driver circuit configured to send at least one signal to said display.

24. The apparatus of claim 23, further comprising a controller configured to send at least a portion of said image data to said driver circuit.

25. The apparatus of claim 22, further comprising an image source module configured to send said image data to said processor.

26. The apparatus of claim 25, wherein said image source module comprises at least one of a receiver, transceiver, and transmitter.

27. The apparatus of claim 22, further comprising an input device configured to receive an input data and to communicate said input data to said processor.

28. The interferometric modulator of claim 17, wherein the diffusion barrier layer is directly contacting the mirror and the mechanical layer.

29. The interferometric modulator of claim 17, wherein the diffusion barrier layer comprises aluminum oxide, Si₃N₄, titanium nitride, tantalum nitride, silicon carbide, titanium carbide, alumino silicate, or TiB₂.