Method and apparatus for atomic layer deposition (ALD) in a proximity system
First Claim
1. An apparatus for processing a substrate, comprising:
- a first process window configured to apply a first fluid meniscus between the first process window and a surface of the substrate;
a second process window configured to generate a second fluid meniscus between the second process window and the surface of the substrate; and
a third process window configured to generate a third fluid meniscus between the third process window and the surface of the substrate;
wherein the apparatus is configured to apply the first fluid meniscus, the second fluid meniscus, and the third fluid meniscus to the surface of the substrate in order during an atomic layer deposition operation, wherein each of the first, second and third process windows are coupled to a manifold.
1 Assignment
0 Petitions
Accused Products
Abstract
An apparatus for processing a substrate is provided which includes a first process window configured to apply a first fluid meniscus between the first process window and a surface of the substrate. The apparatus further includes a second process window configured to generate a second fluid meniscus between the second process window and the surface of the substrate. The apparatus further includes a third process window configured to generate a third fluid meniscus between the third process window and the surface of the substrate. The apparatus is configured to apply the first fluid meniscus, the second fluid meniscus, and the third fluid meniscus to the surface of the substrate in order during an atomic layer deposition operation.
91 Citations
23 Claims
-
1. An apparatus for processing a substrate, comprising:
-
a first process window configured to apply a first fluid meniscus between the first process window and a surface of the substrate; a second process window configured to generate a second fluid meniscus between the second process window and the surface of the substrate; and a third process window configured to generate a third fluid meniscus between the third process window and the surface of the substrate; wherein the apparatus is configured to apply the first fluid meniscus, the second fluid meniscus, and the third fluid meniscus to the surface of the substrate in order during an atomic layer deposition operation, wherein each of the first, second and third process windows are coupled to a manifold. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. An apparatus for processing a substrate, comprising:
-
a first set of conduits defined on a surface of the apparatus configured to apply a first fluid meniscus between the first set of conduits and a surface of the substrate; a second set of conduits defined on the surface of the apparatus configured to generate a second fluid meniscus between the second set of conduits and the surface of the substrate; and a third set of conduits configured to generate a third fluid meniscus between the third set of conduits and the surface of the substrate; wherein the apparatus is configured to apply the first fluid meniscus, the second fluid meniscus, and the third fluid meniscus to the surface of the substrate in order during an atomic layer deposition operation, and the first, second and third conduits are each coupled to a manifold. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23)
-
Specification