Apparatus and method for monitoring processing of a substrate

• US 7,632,419 B1
• Filed: 06/16/2000
• Issued: 12/15/2009
• Est. Priority Date: 10/06/1997
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Pan, Shaoher X., Grimbergen, Michael
• Primary Examiner(s): OLSEN, ALLAN W
• Application Number:
  US09/595,778
• Time in Patent Office: 3,469 Days
• Field of Search: 216/60, 216/63, 216/68, 216/71, 156/345, 156/345.24, 156/345.48, 118/712, 118/723.I, 438/16, 427/10, 702/24
• US Class Current: 216/60
• CPC Class Codes: H01J 37/32458 Vessel
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

Apparatus for in-situ monitoring of a process in a semiconductor wafer processing system consists of a process chamber having a dome, an enclosure disposed above the chamber, a process monitoring assembly positioned proximate the dome, an opening in the dome, and a window covering the opening. A portion of the apparatus supports the process monitoring assembly to establish a line-of-sight propagation path of monitoring beams from above the dome, through the window to the substrate to facilitate etch depth measurement without encountering interference from high power energy sources proximate the chamber. A method of fabricating a process monitoring apparatus consists of the steps of boring an opening into a dome, positioning the process monitoring assembly in proximity to the dome so as to allow a line-of-sight propagation path of monitoring beams from the process monitoring assembly to a wafer, and covering the opening with a window. The window is permanent or removable dependent upon the type of process monitoring assembly being used in the system.

Claims

1. A method of etching a substrate in a process chamber comprising a wall, the method comprising:

providing a substrate in the process chamber, the substrate having a surface;

introducing an etching gas into the process chamber;

applying an RF current through a multi-turn antenna covering a top surface of the chamber wall to pass RF energy through the chamber wall to the etching gas inside the process chamber to energize the etching gas to etch trenches in the substrate;

detecting radiation reflected from the substrate from directly above the surface of the substrate after the radiation propagates through the chamber wall; and

evaluating the detected radiation to monitor the depth of a layer being etched on the substrate.

2. A method according to claim 1 wherein the radiation propagating through the chamber wall comprises an optical beam.

3. A method according to claim 1 wherein the chamber wall comprises a window that (1) faces the substrate, (2) is permeable to X-rays, (3) is permeable to an optical beam, (4) comprises one or more of silica, sapphire or quartz, (5) is removable from the chamber wall, or (6) is permanently affixed about an opening in the chamber wall.

4. A method according to claim 1 comprising monitoring radiation propagating through the chamber wall with a process monitoring assembly, and wherein the process monitoring assembly (1) is housed in an enclosure above the chamber wall, (2) is adapted to be mounted above a window in the chamber wall, (3) is mounted to allow line-of-sight view of the substrate in the process chamber, (4) is responsive to radiation, or (5) comprises an interferometer.

5. A method according to claim 1 comprising applying an RF current through a multi-turn antenna above a top surface of a portion of a chamber wall comprising a ceiling of the process chamber facing the substrate to inductively couple the RF energy through the portion of the ceiling of the process chamber to the gas inside the process chamber to energize the gas.

6. A method according to claim 1 comprising collimating the detected radiation and evaluating the detected collimated radiation to monitor the depth of a layer being processed on the substrate.

7. A method according to claim 1 comprising powering an antenna covering a portion of the chamber wall to couple the RF energy to gas in the chamber.

8. A method according to claim 1 wherein the chamber wall is at least partially covered by a multi-turn antenna, and the chamber comprises a cathode within the chamber, and wherein the method comprises coupling RF energy to the gas in the chamber by applying RF currents to the cathode and multi-turn antenna.

9. A method according to claim 1 wherein the chamber wall is a flat wall and a multi-turn antenna at least partially covers the flat wall, and wherein the method comprises coupling energy across the flat wall to the gas in the chamber by powering the multi-turn antenna.

10. A method according to claim 1 wherein the chamber wall comprises a ceiling, and wherein the method comprises monitoring radiation from above the ceiling.

11. A method according to claim 1 comprising coupling RF power to the gas by powering a non-vertical multi-turn antenna comprising a coil that spirals radially inward.

12. A method according to claim 1 comprising coupling RF power to the gas by powering a non-vertical multi-turn antenna comprising a coil having separate turns, each turn having a different radius.

13. A method according to claim 1 comprising monitoring radiation propagating through the chamber wall with a process monitoring assembly comprising a signal source, a signal detector, a collimating assembly and a radiation transmission cable connecting the collimating assembly to the signal source and signal detector, the radiation transmission cable having a bifurcated end.

14. A method according to claim 13 comprising connecting a first branch of the bifurcated end to the signal source and a second branch of the bifurcated end to the signal detector.

15. A method according to claim 5 comprising directing radiation onto the substrate surface from directly above the surface of the substrate and through the top surface of the portion of the ceiling of the process chamber.

16. A method according to claim 15 comprising detecting radiation reflected from the substrate from directly above the surface of the substrate after the radiation propagates through a window in the portion of the ceiling facing the substrate.

17. A method according to claim 1 wherein the chamber wall comprises a top surface that is above the substrate, and wherein the method comprises coupling RF energy across a substantial portion of the top surface to the gas in the chamber.

18. A method according to claim 17 wherein the process chamber comprises a multi-turn antenna above the top surface, and wherein the method comprises coupling RF energy thorough the top surface by powering the multi-turn antenna.

19. A method according to claim 1 comprising detecting radiation propagating through a chamber wall comprising a ceramic.

20. A method according to claim 19 wherein the ceramic comprises alumina or silica.

21. A method according to claim 1 comprising energizing the gas by powering a multi-turn antenna comprising a spiral coil.

22. A method according to claim 21 wherein the multi-turn antenna covers a portion of a chamber wall comprising a ceiling of the process chamber and is non-vertical.

23. A method according to claim 22 wherein the ceiling comprises a ceramic that is permeable to RF energy.

24. A method of etching a substrate in a process chamber, the process chamber comprising a wall and having a non-vertical multi-turn antenna above the wall, the method comprising:

placing in the process chamber, a substrate having a layer;

introducing an etching gas into the process chamber;

powering the non-vertical multi-turn antenna covering a top surface of the chamber wall to couple energy through the wall to the etching gas inside the process chamber to energize the etching gas to etch the layer on the substrate;

detecting radiation reflected from the substrate from directly above the surface of the substrate after the radiation propagates through the wall; and

evaluating the detected radiation to monitor the depth of the layer being etched on the substrate.

25. A method of etching a substrate in a process chamber, the process chamber comprising a ceiling and a multi-turn antenna above the ceiling, the method comprising:

providing a substrate in the process chamber, the substrate having a surface;

introducing an etching gas into the process chamber;

applying an RF current to the multi-turn antenna to pass RF energy through the ceiling of the process chamber to the etching gas inside the process chamber to energize the etching gas;

detecting radiation reflected from the substrate from directly above the surface of the substrate after the radiation propagates through the ceiling; and

evaluating the detected radiation to monitor etching of the substrate.