Thin film transistor panel

• US 7,633,090 B2
• Filed: 02/17/2006
• Issued: 12/15/2009
• Est. Priority Date: 02/28/2005
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Casio Computer Company Limited
• Inventors: Ishii, Hiromitsu
• Primary Examiner(s): Phung; Anh
• Assistant Examiner(s): BERNSTEIN, ALLISON
• Application Number:
  US11/357,595
• Publication Number:
  US 20060194500A1
• Time in Patent Office: 1,397 Days
• Field of Search: 257/72, 257/435, 257/66, 257/71, 257/59, 257/E27.111, 257/E29.043, 257/E29.282, 257/E27.147
• US Class Current: 257/72
• CPC Class Codes: G02F 1/134336 Matrix
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 2201/40 Arrangements for improving the aperture ratio
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/12 characterised by the materials of which they are formed

Abstract

A thin film transistor panel, including: a transparent substrate; scanning lines made of a transparent electroconductive material, formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data line, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover each of the thin film transistors.

Claims

1. A thin film transistor panel, comprising:

a transparent substrate;

scanning lines made of a transparent electroconductive material, formed on the transparent substrate;

data lines made of a transparent electroconductive material, formed on the transparent substrate to be perpendicular to the scanning lines;

thin film transistors, each including a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data lines, a transparent source electrode, and a transparent semiconductor thin film made of a metal oxide and including a channel region at a middle portion thereof;

transparent pixel electrodes connected to the thin film transistors; and

a light blocking film formed between the transparent pixel electrodes and having a width wider than gaps between the transparent pixel electrodes so as to overlap with peripheral portions of the transparent pixel electrodes in a plan view, the light blocking film being formed continuously all the way along the scanning lines and the data lines without any break;

wherein the scanning lines and the data lines extend substantially all the way along the gaps between the transparent pixel electrodes; and

wherein each of the transparent pixel electrodes is formed to cover a respective one of the thin film transistors, and the light blocking film is formed so as not to overlap with the channel regions of the transparent semiconductor thin films of the thin film transistors.

2. The thin film transistor panel according to claim 1, wherein in each of the thin film transistors, the drain electrode is made of a metal oxide including impurities.

3. The thin film transistor panel according to claim 2, wherein in each of the thin film transistors, the drain electrode and the source electrode are formed on the semiconductor thin film.

4. The thin film transistor panel according to claim 1, wherein in each of the thin film transistors, the gate electrode is made of a metal oxide including impurities, and the drain electrode is made of a transparent electroconductive material.

5. The thin film transistor panel according to claim 4, wherein in each of the thin film transistors, the drain electrode and the source electrode are formed below the semiconductor thin film.

6. The thin film transistor panel according to claim 4, wherein in each of the thin film transistors, the metal oxide of the gate electrode includes p type impurities.

7. The thin film transistor panel according to claim 4, wherein the scanning lines are formed with a same material as the gate electrodes, and the data lines are formed with a same material as the drain electrodes.

8. The thin film transistor panel according to claim 1, wherein each of the transparent pixel electrodes is formed with a transparent electroconductive material, and is connected to a corresponding one of the source electrodes of the thin film transistors.

9. The thin film transistor panel according to claim 1, wherein the light blocking film comprises an auxiliary capacity electrode which is provided between the transparent pixel electrodes and the data lines through an insulation film.

10. The thin film transistor panel according to claim 9, wherein the auxiliary capacity electrode is formed with a grid-like light blocking metal to cover the scanning lines and the data lines, and the auxiliary capacity electrode has a width wider than widths of each of the scanning lines and the data lines.

11. The thin film transistor panel according to claim 1, further comprising light emitting portions, each provided with an anode electrode, an organic EL layer and a cathode electrode,

wherein in each of the thin film transistors, the drain electrode is made of a metal oxide including impurities.

12. The thin film transistor panel according to claim 11, wherein an extended portion of the source electrode of each of the thin film transistors is formed as the anode electrode of each of the light emitting portions.

13. The thin film transistor panel according to claim 1, further comprising light emitting portions, each provided with an anode electrode, an organic EL layer and a cathode electrode, which is provided on each of the thin film transistors through an insulating layer.

14. The thin film transistor panel according to claim 13, wherein the insulating layer is a planarizing film.

15. The thin film transistor panel according to claim 13, wherein the anode electrode, the organic EL layer and the cathode electrode are laminated in order from a side of the insulating layer.

16. The thin film transistor panel according to claim 15, wherein the cathode electrode is a reflecting electrode.