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Semiconductor device and manufacturing method of the same

  • US 7,633,133 B2
  • Filed: 12/15/2006
  • Issued: 12/15/2009
  • Est. Priority Date: 12/15/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate comprising a front surface and a back surface;

    a light receiving element formed on the front surface of the semiconductor substrate;

    a transparent substrate attached to the front surface of the semiconductor substrate so as to cover the light receiving element;

    a plurality of wiring layers formed on the back surface of the semiconductor substrate so that no one wiring layer is in a path of light passing through the transparent substrate and the light receiving element;

    a protection layer covering the wiring layers; and

    a reflection layer made of a metal and formed on the back surface of the semiconductor substrate so as to be in the path of the light passing through the transparent substrate and the light receiving element.

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