Semiconductor device having through contact blocks with external contact areas

• US 7,633,141 B2
• Filed: 02/02/2007
• Issued: 12/15/2009
• Est. Priority Date: 02/03/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Huber, Erwin
• Primary Examiner(s): VU, HUNG K
• Application Number:
  US11/670,796
• Publication Number:
  US 20070182003A1
• Time in Patent Office: 1,047 Days
• Field of Search: 257/666, 257/672, 257/675, 257/676, 257/685, 257/686, 257/698, 257/723, 257/724, 257/734, 257/777, 257/692, 257/693, 257/E23.042, 257/E23.043, 257/E23.046, 257/E23.052, 257/E23.061
• US Class Current: 257/666
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/37099 Material
• CPC Class Codes: H01L 2224/40245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48471 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/84801 Soldering or alloying
• CPC Class Codes: H01L 2224/8485 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49524 the additional leads being a tape carrier or flat leads
• CPC Class Codes: H01L 23/49537 Plurality of lead frames mounted in one device
• CPC Class Codes: H01L 23/49548 Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/36 Structure, shape, material or disposition of the strap connectors prior to the connecting process
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/39 : Structure, shape, material or disposition of the strap connectors after the connecting process
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 25/117 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

The stackable semiconductor device includes at least one first electrode on a top side and a large-area second electrode on an underside of a semiconductor chip. The semiconductor chip also includes a control electrode on one of: the top side or the underside. Through contact blocks are arranged on the edge sides of the semiconductor device, the through contact blocks including externally accessible external contact areas. The external contact area each includes at least one edge side contact area, a top side contact area and an underside contact area. At least one large-area external contact is arranged on the underside and/or on the top side of the semiconductor device.

Claims

1. A semiconductor device, comprising:

a semiconductor chip including;

at least one first electrode disposed on a top side of the semiconductor chip, a large-area second electrode disposed on an underside of the semiconductor chip, and a control electrode disposed on the top side or the underside of the semiconductor chip;

through contact blocks with external contact areas, the through contact blocks being arranged on edge sides of the semiconductor device and being externally accessible via the external contact areas including;

at least one edge side contact area, a top side contact area, and an underside contact area;

a plastic housing having an outer surface that constitutes one of an underside surface and a top side surface of the semiconductor device; and

at least one large-area external contact having an outer surface that constitutes the other of the underside surface and the top side surface of the semiconductor device,

wherein the top side contact area of each of the through contact blocks is coplanar with the top side surface of the semiconductor device, and the underside contact area of each of the through contact blocks is coplanar with the underside surface of the semiconductor device.

2. The semiconductor device as claimed in claim 1, wherein the control electrode of the semiconductor chip is electrically connected to one of the through contact blocks.

3. The semiconductor device as claimed in claim 1, wherein the first electrode of the semiconductor chip is electrically connected to at least three through contact blocks.

4. The semiconductor device as claimed in claim 3, wherein the through contact blocks connected to the first electrode are electrically connected to the large-area external contact disposed on the top side or the underside of the semiconductor device.

5. The semiconductor device as claimed in claim 1, wherein the second electrode of the semiconductor chip is electrically connected to at least three through contact blocks.

6. The semiconductor device as claimed in claim 5, wherein the through contact blocks connected to the second electrode are electrically connected to the large-area external contact disposed on the top side or the underside of the semiconductor device.

7. The semiconductor device as claimed in claim 1, wherein:

the first electrode of the semiconductor chip is electrically connected to at least three through contact blocks;

the second electrode of the semiconductor chip is electrically connected to at least three through contact blocks; and

the through contact blocks electrically connected to the first electrode and the through contact blocks electrically connected to the second electrode are arranged on opposing edge sides of the semiconductor device.

8. A power semiconductor module, wherein the power semiconductor module comprises:

at least one semiconductor device as claimed in claim 1.

9. A hybrid circuit component, wherein the hybrid circuit component comprises:

at least one semiconductor device as claimed in claim 1.

10. The semiconductor device as claimed in claim 1, further comprising:

an integrated circuit.

11. A semiconductor device, comprising:

a semiconductor chip including;

at least one first electrode disposed on a top side of the semiconductor chip, a large-area second electrode disposed on an underside of the semiconductor chip, and a control electrode disposed on the top side or the underside of the semiconductor chip;

through contact blocks with external contact areas, the through contact blocks being arranged on edge sides of the semiconductor device and being externally accessible via the external contact areas including;

at least one edge side contact area, a top side contact area, and an underside contact area, wherein the through contact blocks comprise;

a lower through contact block half and an upper through contact block half, the lower and upper halves being cohesively joined to form a through contact block via a horizontal connecting joint; and

at least one large-area external contact arranged on the underside and/or the top side of the semiconductor device.

12. The semiconductor device as claimed in claim 11, wherein the connecting joint comprises a eutectic soldering seam.

13. The semiconductor device as claimed in claim 11, wherein the connecting joint comprises a diffusion solder seam.

14. A semiconductor device, comprising:

a semiconductor chip including;

at least one first electrode disposed on a top side of the semiconductor chip, a large-area second electrode disposed on an underside of the semiconductor chip, and a control electrode disposed on the top side or the underside of the semiconductor chip;

through contact blocks with external contact areas, the through contact blocks being arranged on edge sides of the semiconductor device and being externally accessible via the external contact areas including;

at least one edge side contact area, a top side contact area, and an underside contact area, wherein the control electrode is electrically connected to two centrosymmetrically opposing through contact blocks; and

at least one large-area external contact arranged on the underside and/or the top side of the semiconductor device.