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Semiconductor device having through contact blocks with external contact areas

  • US 7,633,141 B2
  • Filed: 02/02/2007
  • Issued: 12/15/2009
  • Est. Priority Date: 02/03/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor chip including;

    at least one first electrode disposed on a top side of the semiconductor chip, a large-area second electrode disposed on an underside of the semiconductor chip, and a control electrode disposed on the top side or the underside of the semiconductor chip;

    through contact blocks with external contact areas, the through contact blocks being arranged on edge sides of the semiconductor device and being externally accessible via the external contact areas including;

    at least one edge side contact area, a top side contact area, and an underside contact area;

    a plastic housing having an outer surface that constitutes one of an underside surface and a top side surface of the semiconductor device; and

    at least one large-area external contact having an outer surface that constitutes the other of the underside surface and the top side surface of the semiconductor device,wherein the top side contact area of each of the through contact blocks is coplanar with the top side surface of the semiconductor device, and the underside contact area of each of the through contact blocks is coplanar with the underside surface of the semiconductor device.

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