Semiconductor device having through contact blocks with external contact areas
First Claim
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1. A semiconductor device, comprising:
- a semiconductor chip including;
at least one first electrode disposed on a top side of the semiconductor chip, a large-area second electrode disposed on an underside of the semiconductor chip, and a control electrode disposed on the top side or the underside of the semiconductor chip;
through contact blocks with external contact areas, the through contact blocks being arranged on edge sides of the semiconductor device and being externally accessible via the external contact areas including;
at least one edge side contact area, a top side contact area, and an underside contact area;
a plastic housing having an outer surface that constitutes one of an underside surface and a top side surface of the semiconductor device; and
at least one large-area external contact having an outer surface that constitutes the other of the underside surface and the top side surface of the semiconductor device,wherein the top side contact area of each of the through contact blocks is coplanar with the top side surface of the semiconductor device, and the underside contact area of each of the through contact blocks is coplanar with the underside surface of the semiconductor device.
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Abstract
The stackable semiconductor device includes at least one first electrode on a top side and a large-area second electrode on an underside of a semiconductor chip. The semiconductor chip also includes a control electrode on one of: the top side or the underside. Through contact blocks are arranged on the edge sides of the semiconductor device, the through contact blocks including externally accessible external contact areas. The external contact area each includes at least one edge side contact area, a top side contact area and an underside contact area. At least one large-area external contact is arranged on the underside and/or on the top side of the semiconductor device.
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Citations
14 Claims
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1. A semiconductor device, comprising:
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a semiconductor chip including;
at least one first electrode disposed on a top side of the semiconductor chip, a large-area second electrode disposed on an underside of the semiconductor chip, and a control electrode disposed on the top side or the underside of the semiconductor chip;through contact blocks with external contact areas, the through contact blocks being arranged on edge sides of the semiconductor device and being externally accessible via the external contact areas including;
at least one edge side contact area, a top side contact area, and an underside contact area;a plastic housing having an outer surface that constitutes one of an underside surface and a top side surface of the semiconductor device; and at least one large-area external contact having an outer surface that constitutes the other of the underside surface and the top side surface of the semiconductor device, wherein the top side contact area of each of the through contact blocks is coplanar with the top side surface of the semiconductor device, and the underside contact area of each of the through contact blocks is coplanar with the underside surface of the semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device, comprising:
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a semiconductor chip including;
at least one first electrode disposed on a top side of the semiconductor chip, a large-area second electrode disposed on an underside of the semiconductor chip, and a control electrode disposed on the top side or the underside of the semiconductor chip;through contact blocks with external contact areas, the through contact blocks being arranged on edge sides of the semiconductor device and being externally accessible via the external contact areas including;
at least one edge side contact area, a top side contact area, and an underside contact area, wherein the through contact blocks comprise;
a lower through contact block half and an upper through contact block half, the lower and upper halves being cohesively joined to form a through contact block via a horizontal connecting joint; andat least one large-area external contact arranged on the underside and/or the top side of the semiconductor device. - View Dependent Claims (12, 13)
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14. A semiconductor device, comprising:
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a semiconductor chip including;
at least one first electrode disposed on a top side of the semiconductor chip, a large-area second electrode disposed on an underside of the semiconductor chip, and a control electrode disposed on the top side or the underside of the semiconductor chip;through contact blocks with external contact areas, the through contact blocks being arranged on edge sides of the semiconductor device and being externally accessible via the external contact areas including;
at least one edge side contact area, a top side contact area, and an underside contact area, wherein the control electrode is electrically connected to two centrosymmetrically opposing through contact blocks; andat least one large-area external contact arranged on the underside and/or the top side of the semiconductor device.
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Specification