Semiconductor device with antenna and separating layer

• US 7,633,145 B2
• Filed: 01/11/2005
• Issued: 12/15/2009
• Est. Priority Date: 01/16/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Akiba, Mai, Kanno, Yohei, Tachimura, Yuko
• Primary Examiner(s): Fahmy; Wael
• Assistant Examiner(s): Ingham; John C
• Application Number:
  US10/586,339
• Publication Number:
  US 20070164413A1
• Time in Patent Office: 1,799 Days
• Field of Search: 257/679, 257/E21.174, 340/572.7, 340/572.8, 438/149
• US Class Current: 257/679
• CPC Class Codes: G06K 19/073 Special arrangements for circuits, e.g. for protecting identification code in memory protection against unauthorised use of computer memory G06F12/14
• CPC Class Codes: G06K 19/07726 the record comprising means for indicating first use, e.g. a frangible layer
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/0776 the adhering arrangement being a layer of adhesive, so that the record carrier can function as a sticker
• CPC Class Codes: G06K 19/07798 part of the antenna or the integrated circuit being adapted for rupturing or breaking, e.g. record carriers functioning as sealing devices for detecting not-authenticated opening of containers electronic seals G09F3/03
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

The invention provides a semiconductor device which can reliably restrict transmission/reception of signals or a power source voltage between a reader/writer when peeled off after stuck to an object. The semiconductor device of the invention includes an integrated circuit and an antenna formed on a support base. In the semiconductor device of the invention, a separating layer which is overlapped with the integrated circuit and the antenna sandwiching an insulating film is formed on the support base. A wiring for electrically connecting the integrated circuit and the antenna, a wiring for electrically connecting semiconductor elements in an integrated circuit, or a wiring which forms the antenna passes through the separating layer.

Claims

1. A semiconductor device comprising:

a support base interposed between a pair of first adhesives;

a thin film integrated circuit, an antenna, and a separating layer over the pair of first adhesives;

a wiring electrically connecting the thin film integrated circuit and the antenna;

a second adhesive over the wiring; and

a cover material over the second adhesive,

wherein the wiring passes through the separating layer, and

wherein the pair of first adhesives has a higher adhesion than the separating layer.

4. A semiconductor device according to any one of claims 1 to 3, wherein the antenna is formed by one of a printing method and a droplet discharging method.

7. A semiconductor device according to any one of claims 1 to 3, wherein the thin film integrated circuit and the antenna are formed over a substrate and then peeled off by removing the substrate, and stuck to the support base using one of the pair of first adhesives.

12. A semiconductor device according to any one of claims 1 to 3, 8 and 10, wherein the separating layer comprises a metal oxide film containing at least one selected from the group consisting of TiN, WN, Mo and W.

13. A semiconductor device according to claim 12, wherein the metal oxide film is in a crystalline state.

14. A semiconductor device according to any one of claims 1 to 3, 8 and 10, wherein the support base comprises at least one of a plastic and a paper.

15. A semiconductor device according to any one of claims 1 to 3, 8 and 10, wherein the semiconductor device is stuck to an object selected from the group consisting of a container, an envelope, a check and a passport.

2. A semiconductor device comprising:

a support base interposed between a pair of first adhesives;

a thin film integrated circuit, a separating layer, and an antenna sequentially laminated over the pair of first adhesives;

a wiring electrically connecting the thin film integrated circuit and the antenna;

a second adhesive over the wiring; and

a cover material over the second adhesive,

wherein the wiring passes through the separating layer, and

wherein the pair of first adhesives has a higher adhesion than the separating layer.

3. A semiconductor device comprising:

a support base interposed between a pair of first adhesives;

a thin film integrated circuit, an antenna, and a separating layer over the pair of first adhesives, wherein the thin film integrated circuit comprises a plurality of semiconductor elements;

a wiring electrically connecting the plurality of semiconductor elements;

a second adhesive over the wiring; and

a cover material over the second adhesive,

wherein the wiring passes through the separating layer, and

wherein the pair of first adhesives has a higher adhesion than the separating layer.

5. A semiconductor device according to claim 3, wherein the plurality of semiconductor elements comprise thin film transistors, wherein each of the thin film transistors comprises a semiconductor film and a gate electrode with a gate insulating film interposed therebetween.

6. A semiconductor device according to claim 5, wherein the antenna and the gate electrode are formed by patterning a same conductive film.

8. A semiconductor device comprising:

a support base interposed between a pair of first adhesives;

a thin film integrated circuit, an antenna, and a separating layer over the pair of first adhesives;

a second adhesive over the antenna; and

a cover material over the second adhesive,

wherein the antenna comprises a plurality of wirings connected in series, and wherein at least one of the plurality of wirings passes through the separating layer, and

wherein the pair of first adhesives has a higher adhesion than the separating layer.

9. A semiconductor device according to claim 8, wherein the thin film integrated circuit and the antenna are formed over a substrate and then peeled off the substrate by removing the substrate, and stuck to the support base using one of the pair of first adhesives.

10. A semiconductor device comprising:

a support base interposed between a pair of first adhesives;

a thin film integrated circuit, an antenna, and a separating layer sequentially laminated over the pair of first adhesives;

a second adhesive over the antenna; and

a cover material over the second adhesive,

wherein the antenna comprises a plurality of wirings connected in series,

wherein at least one of the plurality of wirings passes through the separating layer, and

wherein the pair of first adhesives has a higher adhesion than the separating layer.

11. A semiconductor device according to claim 10, wherein the thin film integrated circuit and the antenna are formed over a substrate and then peeled off the substrate by removing the substrate, and stuck to the support base using one of the pair of first adhesives.