Etchant composition and manufacturing method for thin film transistor array panel
First Claim
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1. A manufacturing method of a TFT array panel comprising:
- forming a gate line made of a conductive material on an insulating substrate;
forming a gate insulating layer on the gate line;
forming a semiconductor layer having a predetermined pattern on the gate insulating layer;
forming a data line and drain electrode made of a conductive material on the semiconductor layer; and
forming a pixel electrode connected to the drain electrode,wherein at least one of the formation of the gate line, the formation of the data line and drain electrode, and the formation of the pixel electrode comprises an photo-etching with an etchant containing phosphoric acid (H3PO4), nitric acid (HNO3), acetic acid (CH3COOH), and aluminum nitrate (Al(NO3)3).
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Abstract
The present invention provides an etchant composition containing 60 to 75 wt % of phosphoric acid (H3PO4), 0.5 to 15 wt % of nitric acid (HNO3), 2 to 15 wt % of acetic acid (CH3COOH), and 0.1 to 15 wt % of aluminum nitrate (Al(NO3)3).
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Citations
12 Claims
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1. A manufacturing method of a TFT array panel comprising:
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forming a gate line made of a conductive material on an insulating substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer having a predetermined pattern on the gate insulating layer; forming a data line and drain electrode made of a conductive material on the semiconductor layer; and forming a pixel electrode connected to the drain electrode, wherein at least one of the formation of the gate line, the formation of the data line and drain electrode, and the formation of the pixel electrode comprises an photo-etching with an etchant containing phosphoric acid (H3PO4), nitric acid (HNO3), acetic acid (CH3COOH), and aluminum nitrate (Al(NO3)3). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification