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Etchant composition and manufacturing method for thin film transistor array panel

  • US 7,635,436 B2
  • Filed: 11/10/2005
  • Issued: 12/22/2009
  • Est. Priority Date: 02/15/2005
  • Status: Active Grant
First Claim
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1. A manufacturing method of a TFT array panel comprising:

  • forming a gate line made of a conductive material on an insulating substrate;

    forming a gate insulating layer on the gate line;

    forming a semiconductor layer having a predetermined pattern on the gate insulating layer;

    forming a data line and drain electrode made of a conductive material on the semiconductor layer; and

    forming a pixel electrode connected to the drain electrode,wherein at least one of the formation of the gate line, the formation of the data line and drain electrode, and the formation of the pixel electrode comprises an photo-etching with an etchant containing phosphoric acid (H3PO4), nitric acid (HNO3), acetic acid (CH3COOH), and aluminum nitrate (Al(NO3)3).

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