Method of manufacturing semiconductor device and cleaning apparatus

• US 7,635,601 B2
• Filed: 09/14/2006
• Issued: 12/22/2009
• Est. Priority Date: 01/30/2006
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Miyazaki, Kunihiro, Matsumura, Tsuyoshi, Uozumi, Yoshihiro
• Primary Examiner(s): Sefer; A.
• Assistant Examiner(s): KHAN, FARID H
• Application Number:
  US11/520,589
• Publication Number:
  US 20070178613A1
• Time in Patent Office: 1,195 Days
• Field of Search: 438/17, 438/43, 438/638, 438/639, 438/640, 438/735, 438/738, 257/774, 257/E21.218, 257/E21.219, 257/E21.224, 510/466
• US Class Current: 438/17
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a conductivity of the supplied solution; and supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

Claims

1. A manufacturing method of a semiconductor device comprising:

dry-etching a semiconductor substrate, or an insulating interlayer structure or a gate electrode material formed on the semiconductor substrate, wherein etching residue material is left on the etched surface;

supplying a solution onto the semiconductor substrate and the solution being collected;

measuring a specific resistance or a conductivity of the collected supplied solution; and

supplying a removal solution onto the semiconductor substrate for removing the etching residual material from the etched surface of the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the supplied solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

2. The manufacturing method of a semiconductor device according to claim 1, wherein

the supplied solution supplied onto the semiconductor substrate is a solution having an oxidation-reduction potential of 0.5 V or less.

3. The manufacturing method of a semiconductor device according to claim 1, wherein

the supplied solution supplied onto the semiconductor substrate is pure water.

4. The manufacturing method of a semiconductor device according to claim 1, wherein

the specific resistance or the conductivity of the supplied solution is periodically or continuously measured,

the predetermined period for supplying the removal solution is determined on the basis of a minimum value of the specific resistance or a maximum value of the conductivity of the supplied solution.

5. A manufacturing method of a semiconductor device comprising:

dry-etching a semiconductor substrate, or an insulating interlayer structure or a gate electrode material formed on the semiconductor substrate, wherein etching residue material is left on the etched surface;

supplying a solution from a nozzle onto the semiconductor substrate and the solution being collected while scanning the semiconductor substrate from the end portion to the central portion thereof and while rotating the semiconductor substrate;

periodically or continuously measuring a specific resistance or a conductivity of the collected supplied solution; and

supplying a removal solution onto the semiconductor substrate for removing the etching residual material from the etched surface of the semiconductor substrate while keeping the semiconductor substrate at a predetermined temperature on the basis of the specific resistance or the conductivity of the supplied solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

6. The manufacturing method of a semiconductor device according to claim 5, wherein

at least a temperature of an end portion of the semiconductor substrate and a temperature of the central portion of the semiconductor substrate are independently determined on the basis of a specific resistance or a conductivity of a solution supplied to the end portion of the semiconductor substrate and a specific resistance or a conductivity of a solution supplied to the central portion of the semiconductor substrate;

and

during the removing of the etching residual material, the removal solution is supplied onto the semiconductor substrate while keeping the end portion of the semiconductor substrate and the central portion of the semiconductor substrate at temperatures determined for the end portion and the central portion, respectively.

7. A manufacturing method of a semiconductor device comprising:

dry-etching a semiconductor substrate, or an insulating interlayer structure or a gate electrode material formed on the semiconductor substrate, wherein etching residue material is left on the etched surface;

supplying a solution onto the semiconductor substrate;

measuring a specific resistance or a conductivity of the supplied solution; and

determining a puddle time for accumulating a removal solution on a surface of the semiconductor substrate on the basis of the specific resistance or the conductivity of the supplied solution, the removal solution removing an etching residual material adhering to the semiconductor substrate or the structure during the dry-etching;

determining a relative temperature between the semiconductor substrate and the removal solution on the basis of a coarseness/denseness of surface patterns of the semiconductor substrate; and

supplying the removal solution, which has a temperature different from the semiconductor substrate by the relative temperature, on the semiconductor substrate, and accumulating the removal solution on the semiconductor substrate for the puddle time, when the etching residual material is removed.

8. The method of manufacturing a semiconductor device according to claim 7, wherein

when the specific resistance or the conductivity of the supplied solution increases as a density of surface patterns of the semiconductor substrate or a density of surface patterns of the structure are low, a temperature of the semiconductor substrate is set to be lower than a temperature of the removal solution;

and

when the specific resistance or the conductivity of the supplied solution decreases as the density of the surface patterns of the semiconductor substrate or the density of the surface patterns of the structure are low, the temperature of the semiconductor substrate is set to be higher than the temperature of the removal solution.

9. A manufacturing method of a semiconductor device comprising:

dry-etching a semiconductor substrate, or an insulating interlayer structure or a gate electrode material formed on the semiconductor substrate, wherein etching residue material is left on the etched surface;

supplying a solution, which has an oxidation-reduction potential of 0.5 V or less, on the semiconductor substrate or the structure, to which an etching residual material adheres;

removing the etching residual material by supplying the removal solution onto the semiconductor substrate or the structure.

10. The manufacturing method of a semiconductor device according to claim 9, wherein

the supplied solution includes any one of a solution including any one of a hydrochloric acid, a chloric acid, a hypochlorous acid, a chlorous acid, a perchloric acid, a hydrofluoric acid, a hydro cyanic acid, a carbonic acid, hydrogencarbonate, a sulfuric acid, a sulfurous acid, nitric acid, a nitrous acid, a phosphoric acid, a formic acid, an oxalic acid, an acetic acid, a citric acid, a maleic acid, a malonic acid, an oleic acid, a tartaric acid, or a glyoxylic acid.

11. The manufacturing method of a semiconductor device according to claim 9, wherein

the supplied solution is a pure water or a solution in which at least any one of HCI gas, HF gas, CO gas, CO₂ gas, NO gas, NO₂ gas, SO₂ gas, SO₃ gas dissolve.