Semiconductor structures formed on substrates and methods of manufacturing the same
First Claim
1. A method of transferring semiconductor structures from an initial substrate to a base substrate, the method comprising:
- providing an initial substrate with an etch stop layer;
providing a doped silicon layer on the etch stop layer;
after providing the doped silicon layer on the etch stop layer, forming a semiconductor layer over the doped silicon layer;
forming semiconductor structures comprising one or more p-n junctions at least partially within the semiconductor layer using layering, patterning, and doping steps, wherein the semiconductor structures, semiconductor layer, doped silicon layer, etch stop layer, and initial substrate form an intermediate semiconductor processing structure;
supporting the intermediate semiconductor processing structure with a removable support structure;
removing the initial substrate using a substrate removal process that removes the initial substrate up to the etch stop layer;
removing the etch stop layer with a chemical etching process;
depositing a substrate material on the doped silicon layer to form a base substrate; and
removing the removable support structure.
7 Assignments
0 Petitions
Accused Products
Abstract
Processes used to transfer semiconductor structures from an initial substrate to a base substrate include bonding the initial substrate with a silicon dioxide layer to a doped silicon structure weakened sufficiently by hydrogen implantation for cleaving. After cleaving, a doped silicon layer remains, burying the silicon dioxide layer between the doped silicon layer and the initial substrate. Semiconductor structures are formed within/on an epitaxial layer disposed on the doped silicon layer forming an intermediate semiconductor structure. A process handle is temporarily bonded to the semiconductor structures for support. The initial substrate is thinned and removed by a mechanical thinning process followed by chemical etching using the buried silicon dioxide layer as an etch stop. The silicon dioxide layer is chemically removed from the doped silicon layer. A base substrate is formed on the doped silicon layer. The process handle is removed leaving the semiconductor structures disposed on the base substrate.
32 Citations
25 Claims
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1. A method of transferring semiconductor structures from an initial substrate to a base substrate, the method comprising:
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providing an initial substrate with an etch stop layer; providing a doped silicon layer on the etch stop layer; after providing the doped silicon layer on the etch stop layer, forming a semiconductor layer over the doped silicon layer; forming semiconductor structures comprising one or more p-n junctions at least partially within the semiconductor layer using layering, patterning, and doping steps, wherein the semiconductor structures, semiconductor layer, doped silicon layer, etch stop layer, and initial substrate form an intermediate semiconductor processing structure; supporting the intermediate semiconductor processing structure with a removable support structure; removing the initial substrate using a substrate removal process that removes the initial substrate up to the etch stop layer; removing the etch stop layer with a chemical etching process; depositing a substrate material on the doped silicon layer to form a base substrate; and removing the removable support structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming semiconductor structures on a metal substrate, the method comprising:
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providing an initial substrate with an exposed silicon dioxide layer; bonding a hydrogen implanted doped silicon material to the silicon dioxide layer, the hydrogen implanted doped silicon material having a region sufficiently weakened by the hydrogen to allow cleaving the hydrogen implanted doped silicon material along the weakened region; cleaving the hydrogen implanted doped silicon material along the weakened region leaving a doped silicon layer bonded to the silicon dioxide layer; after leaving the doped silicon layer bonded to the silicon dioxide layer, forming a semiconductor layer over the doped silicon layer; forming semiconductor structures at least partially within the semiconductor layer; supporting the semiconductor structures, silicon dioxide layer, and initial substrate with a supporting device; removing the initial substrate; removing the silicon dioxide layer; and providing a sufficient amount of metal to the doped silicon layer to form a metal substrate. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification