TFT-LCD array substrate and method for manufacturing the same
First Claim
1. A thin film transistor liquid crystal display (TFT-LCD) array substrate, comprising:
- a substrate;
a gate line and a data line formed on the substrate and intersecting with each other to define a pixel region;
a pixel electrode formed in the pixel region; and
a TFT that is formed on the substrate and has a gate electrode connected with the gate line, a source electrode connected with the data line, and a drain electrode connected with the pixel electrode,wherein a first insulating layer, a semiconductor layer, and an ohmic contact layer are formed sequentially on the gate line and the gate electrode, and the ohmic contact layer is formed on a source region and a drain region of the semiconductor layer and exposes a channel;
wherein a second insulating layer is formed on the substrate, covers the sidewalls of the gate line and gate electrode, the first insulating layer, the semiconductor layer, and the ohmic contact layer, and exposes the ohmic contact layer in the source region and the drain region;
wherein the data line, the source electrode, the pixel electrode, and the drain electrode are formed on the second insulating layer, and the source electrode and the drain electrode contact the ohmic contact layer in the source region and the drain region through the exposure in the second insulating layer, respectively; and
wherein a passivation layer is formed on the TFT, the gate line and the data line, and exposes the pixel electrode.
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Abstract
A TFT-LCD array substrate and a method for manufacturing the same are disclosed. In the TFT-LCD array substrate, a first insulating layer, a semiconductor layer, and an ohmic contact layer are formed sequentially on the gate line and the gate electrode, and the ohmic contact layer is formed on the source region and the drain region of the semiconductor layer and exposes the channel; a second insulating layer is formed on the substrate, covers the sidewalls of the gate line and gate electrode, the first insulating layer, the semiconductor layer, and the ohmic contact layer, and exposes the ohmic contact layer in the source region and the drain region; the data line, the source electrode, the pixel electrode, and the drain electrode are formed on the second insulating layer; a passivation layer is formed on the TFT, the gate line, and the data line and exposes the pixel electrode.
28 Citations
20 Claims
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1. A thin film transistor liquid crystal display (TFT-LCD) array substrate, comprising:
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a substrate; a gate line and a data line formed on the substrate and intersecting with each other to define a pixel region; a pixel electrode formed in the pixel region; and a TFT that is formed on the substrate and has a gate electrode connected with the gate line, a source electrode connected with the data line, and a drain electrode connected with the pixel electrode, wherein a first insulating layer, a semiconductor layer, and an ohmic contact layer are formed sequentially on the gate line and the gate electrode, and the ohmic contact layer is formed on a source region and a drain region of the semiconductor layer and exposes a channel; wherein a second insulating layer is formed on the substrate, covers the sidewalls of the gate line and gate electrode, the first insulating layer, the semiconductor layer, and the ohmic contact layer, and exposes the ohmic contact layer in the source region and the drain region; wherein the data line, the source electrode, the pixel electrode, and the drain electrode are formed on the second insulating layer, and the source electrode and the drain electrode contact the ohmic contact layer in the source region and the drain region through the exposure in the second insulating layer, respectively; and wherein a passivation layer is formed on the TFT, the gate line and the data line, and exposes the pixel electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a TFT-LCD array substrate, comprising steps of:
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depositing sequentially on a substrate a gate metal layer, a first insulating layer, a semiconductor layer, and an ohmic contact layer and patterning the layers to form a gate line, a gate electrode, and a channel of a TFT on the substrate; depositing a second insulting layer and patterning the second insulating layer to expose the ohmic contact layer in the source region and the drain region of the TFT; depositing a source/drain metal layer, including over the second insulating layer, and patterning the source/drain metal layer to form a data line, a source electrode, and a drain electrode, wherein the data line and the gate line intersect with each other to define a pixel region, and the source electrode and the drain electrode contact the ohmic contact layer in the source region and the drain region through the exposure in the second insulating layer, respectively; and depositing a passivation layer, and after patterning the passivation layer with a photoresist, depositing a pixel electrode material layer, and stripping off the photoresist as well as the pixel electrode material layer on the photoresist to form a pixel electrode. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A TFT-LCD array substrate, comprising:
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a substrate; a gate line and a data line formed on the substrate and intersecting with each other to define a pixel region; a pixel electrode formed in the pixel region; and a TFT that is formed on the substrate and has a gate electrode connected with the gate line, a source electrode connected with the data line, and a drain electrode connected with the pixel electrode, wherein a first insulating layer, a semiconductor layer, and an ohmic contact layer are formed sequentially on the gate line and the gate electrode, and the ohmic contact layer is formed on a source region and a drain region of the semiconductor layer and exposes a channel; wherein a second insulating layer is formed on the substrate, covers the sidewalls of the gate line and gate electrode, the first insulating layer, the semiconductor layer, and the ohmic contact layer, and exposes the ohmic contact layer in the source region and the drain region; wherein the data line, the source electrode, the pixel electrode, and the drain electrode are formed on the second insulating layer, and the source electrode and the drain electrode contact the ohmic contact layer in the source region and the drain region through the exposure in the second insulating layer, respectively; wherein a passivation layer is formed on the TFT, the gate line, and the data line and exposes the pixel electrode; and wherein a groove is formed over the gate line, which cuts off the ohmic contact layer and the semiconductor layer over the gate line and exposes the first insulating layer. - View Dependent Claims (19, 20)
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Specification