Controlled deposition of silicon-containing coatings adhered by an oxide layer

• US 7,638,167 B2
• Filed: 06/04/2004
• Issued: 12/29/2009
• Est. Priority Date: 06/04/2004
• Status: Active Grant

• Current Assignee: SPTS Technologies Limited (KLA Corporation)
• Original Assignee: Applied Microstructures, Inc. (KLA Corporation)
• Inventors: Yi, Richard C., Chinn, Jeffrey D., Nowak, Romuald, Kobrin, Boris
• Primary Examiner(s): Meeks; Timothy
• Assistant Examiner(s): Gambetta; Kelly M
• Application Number:
  US10/862,047
• Publication Number:
  US 20050271809A1
• Time in Patent Office: 2,034 Days
• Field of Search: None
• US Class Current: 427/248.1
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/402 Silicon dioxide

Abstract

We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

Claims

1. A method of controlling the hydrophobicity of a substrate surface by depositing an oxide upon said substrate surface, where said oxide is formed from at least one precursor in a manner which provides control over a density of hydroxyl groups on said oxide surface during deposition of said oxide onto the substrate surface, wherein said oxide is formed on said substrate surface in a process chamber operated at a pressure within the range of about 0.5 Torr to about 30 Torr, wherein said substrate surface temperature during deposition of said oxide ranges from about 15°

C. and about 80°

C., wherein a precise, specific quantity of each precursor material is charged to said process chamber in a batch-like manner by adding each precursor material into the process chamber in controlled aliquots, and wherein said oxide is formed by reacting a chlorosilane vaporous precursor having at least two chlorine atoms with a water precursor.

2. A method in accordance with claim 1, wherein said water precursor is in the form of water vapor.

3. A method in accordance with claim 1 or claim 2, wherein said precursors react essentially on said substrate surface.

4. A method in accordance with claim 1, wherein a combination of a partial pressure of said chlorosilane vaporous precursor and a partial pressure of said water precursor is used to control said reaction between said chlorosilane precursor and said water precursor.

5. A method in accordance with claim 4, wherein said chlorosilane is selected from the group consisting of tetrachlorosilane, hexachlorosilane, hexachlorosiloxane and combinations thereof.

6. A method in accordance with claim 1, wherein a partial pressure of said chlorosilane vaporous precursor ranges from about 1 Torr to about 15 Torr.

7. A method in accordance with claim 1, wherein a temperature of a major processing surface inside said processing chamber ranges from about 20°

C. to about 100°

C.

8. A method in accordance with claim 2, wherein a partial pressure of said water vapor precursor ranges from about 0.5 Torr to about 20 Torr.

9. A method in accordance with claim 1, wherein, subsequent to the deposition of said oxide and the creation of hydroxyl groups on said oxide surface, a vaporous organo-chlorosilane which includes a specific functional group is reacted with said hydroxyl groups to impart specific functional characteristics to said coating.

10. A method in accordance with claim 9, wherein a partial pressure of said organo-chlorosilane vaporous precursor is used to control said reaction between said organo-chlorosilane precursor and said hydroxyl groups so that said reaction occurs substantially on said substrate surface.

11. A method in accordance with claim 10, wherein said reaction occurs essentially on said substrate surface.

12. A method in accordance with claim 9 wherein said organo-silane vaporous precursor includes a functional moiety selected from the group consisting of an alkyl group, an alkoxyl group, an alkyl substituted group containing fluorine, an alkoxyl substituted group containing fluorine, a vinyl group, an ethynyl group, an epoxy group, a glycoxy group, an acrylo group, a substituted group containing a silicon atom or an oxygen atom, and combinations thereof.

13. A method in accordance with claim 12, wherein a partial pressure of said organo-chlorosilane vaporous precursor ranges from about 0.1 Torr to about 10 Torr.

14. A method in accordance with claim 13, wherein said temperature of said major process surface ranges from about 20°

C. to about 100°

C.