ZnO-based thin film transistor and method of manufacturing the same
First Claim
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1. A thin film transistor comprising:
- a substrate;
a channel layer comprising ZnO disposed on the substrate;
a gate disposed between the substrate and the channel layer;
a gate insulating layer disposed between the channel layer and the gate;
a source electrode and a drain electrode disposed on both sides of the channel layer; and
a passivation layer covering the channel layer, the source electrode, and the drain electrode,wherein the channel layer comprises a chloride;
wherein the chloride is distributed through the entire channel layer.
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Abstract
A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
22 Citations
17 Claims
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1. A thin film transistor comprising:
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a substrate; a channel layer comprising ZnO disposed on the substrate; a gate disposed between the substrate and the channel layer; a gate insulating layer disposed between the channel layer and the gate; a source electrode and a drain electrode disposed on both sides of the channel layer; and a passivation layer covering the channel layer, the source electrode, and the drain electrode, wherein the channel layer comprises a chloride;
wherein the chloride is distributed through the entire channel layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a thin film transistor, the method comprising:
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forming a gate on a substrate; forming a gate insulating layer disposed on the gate; forming a channel layer comprising zinc oxide on the gate insulating layer in a position corresponding to the gate; forming a conductive material layer on the channel layer; patterning the conductive material layer to form a source electrode and a drain electrode;
the source electrode and the drain electrode being disposed on both sides of the channel layer;forming a passivation layer on the channel layer, the source electrode, and the drain electrode; and annealing the channel layer;
wherein the patterning of the conductive material layer comprises dry etching using a chlorine etching gas or chlorine-based etching gas, wherein a bond is formed between chlorine of the etching gas and the channel layer to form a chloride in a region near a surface of the channel layer exposed to the etching gas. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of manufacturing a thin film transistor, the method comprising:
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forming a gate on a substrate; forming a gate insulating layer disposed on the gate; forming a channel layer comprising zinc oxide on the gate insulating layer in a position corresponding to the gate;
wherein the channel layer is formed by sputtering an oxide selected from the group consisting of In2O3, Ga2O3, ZnO and a combination comprising at least one of the foregoing oxides together with a chloride selected from the group consisting of GaCl3, InCl3, ZnCl2 and a combination comprising at least one of the foregoing chlorides;forming a conductive material layer on the channel layer; patterning the conductive material layer to form a source electrode and a drain electrode;
the source electrode and the drain electrode disposed on both sides of the channel layer;forming a passivation layer on the channel layer, the source electrode, and the drain electrode; and annealing the channel layer;
wherein the channel layer comprises a chloride. - View Dependent Claims (14, 15, 16, 17)
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Specification