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Double density NROM with nitride strips (DDNS)

  • US 7,638,835 B2
  • Filed: 12/28/2006
  • Issued: 12/29/2009
  • Est. Priority Date: 02/28/2006
  • Status: Expired due to Fees
First Claim
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1. Non-volatile memory (NVM) cell comprising:

  • an ONO layer disposed on a semiconductor substrate and comprising a plurality (n) of ONO stacks;

    for a given memory cell, a gate formed atop a portion of a given ONO stack and an adjacent portion of another ONO stack;

    a first set of word lines disposed atop of a first set of gates;

    a second set of word lines disposed atop of a second set of gates;

    wherein the word lines of said first set have a width different from word lines of said second set.

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