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Method of making wafer structure for backside illuminated color image sensor

  • US 7,638,852 B2
  • Filed: 01/24/2007
  • Issued: 12/29/2009
  • Est. Priority Date: 05/09/2006
  • Status: Expired due to Fees
First Claim
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1. A backside illuminated sensor, comprising:

  • a semiconductor substrate having a front surface and a back surface;

    a plurality of pixels formed on the front surface of the semiconductor substrate;

    a plurality of color filters formed on the back surface of the semiconductor substrate; and

    a planarization layer located between the pixels and the color filters;

    wherein the semiconductor substrate is configured to include a plurality of absorption depths positioned between the plurality of color filters and plurality of pixels such that at least two of the absorption depths have a different thickness from each other; and

    wherein the planarization layer has a plurality of thicknesses inversely proportional to the plurality of absorption depths.

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