Method of making wafer structure for backside illuminated color image sensor
First Claim
1. A backside illuminated sensor, comprising:
- a semiconductor substrate having a front surface and a back surface;
a plurality of pixels formed on the front surface of the semiconductor substrate;
a plurality of color filters formed on the back surface of the semiconductor substrate; and
a planarization layer located between the pixels and the color filters;
wherein the semiconductor substrate is configured to include a plurality of absorption depths positioned between the plurality of color filters and plurality of pixels such that at least two of the absorption depths have a different thickness from each other; and
wherein the planarization layer has a plurality of thicknesses inversely proportional to the plurality of absorption depths.
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Abstract
A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.
54 Citations
6 Claims
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1. A backside illuminated sensor, comprising:
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a semiconductor substrate having a front surface and a back surface; a plurality of pixels formed on the front surface of the semiconductor substrate; a plurality of color filters formed on the back surface of the semiconductor substrate; and a planarization layer located between the pixels and the color filters; wherein the semiconductor substrate is configured to include a plurality of absorption depths positioned between the plurality of color filters and plurality of pixels such that at least two of the absorption depths have a different thickness from each other; and wherein the planarization layer has a plurality of thicknesses inversely proportional to the plurality of absorption depths. - View Dependent Claims (2, 3, 4)
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5. A method for forming a backside illuminated sensor, comprising:
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providing a semiconductor substrate having a front surface and a back surface; forming a first pixel, a second pixel, and a third pixel on the front surface of the semiconductor substrate; forming a first thickness, a second thickness, and a third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thicknesses lie beneath the first, second, and third pixels, respectively; and forming a red color filter, a green color filter, and a blue color filter on the back surface of the semiconductor substrate and aligned with the first, second, and third pixels, respectively. - View Dependent Claims (6)
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Specification